R01UH0822EJ0100 Rev.1.00
Page 1029 of 1041
Jul 31, 2019
RX13T Group
32. Electrical Characteristics
32.11 ROM (Code Flash Memory) Characteristics
Note 1. Definition of program/erase cycle: The program/erase cycle is the number of erasing for each block. When the number of
program/erase cycles is n, each block can be erased n times. For instance, when 4-byte program is performed 256 times for
different addresses in a 1-Kbyte block and then the block is erased, the program/erase cycle is counted as one. However, the
same address cannot be programmed more than once before the next erase cycle (overwriting is prohibited).
Note 2. Characteristic when using the flash programmer and the self-programming library provided from Renesas Electronics.
Note 3. This result is obtained from reliability testing.
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of FCLK should be ±3.5%. Check the accuracy of the frequency from the clock source.
Table 32.42
ROM (Code Flash Memory) Characteristics (1)
Item
Symbol
Min.
Typ.
Max.
Unit
Conditions
Program/erase cycle*
N
PEC
1000
—
—
Times
Data retention
After 1000 times of erase
t
DRP
—
—
Year
T
a
= +85°C
Table 32.43
ROM (Code Flash Memory) Characteristics (2) High-Speed Operating Mode
Conditions: VCC = 2.7 V to 5.5 V, AVCC0 = VCC to 5.5 V, VSS = AVSS0 = 0 V
Temperature range for program/erase: T
a
= –40 to +105°C
Item
Symbol
FCLK = 1 MHz
FCLK = 32 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Program time
4-byte
t
P4
—
103
931
—
52
489
μs
Erase time
1-Kbyte
t
E1K
—
8.23
267
—
5.48
214
ms
128-Kbyte
t
E128K
—
203
463
—
20
228
Blank check time
4-byte
t
BC4
—
—
48
—
—
15.9
μs
1-Kbyte
t
BC1K
—
—
1.58
—
—
0.127
ms
Erase operation forcible stop time
t
SED
—
—
21.6
—
—
12.8
μs
Start-up area switching setting time
t
SAS
—
12.6
543
—
6.16
432
ms
Access window setting time
t
AWS
—
12.6
543
—
6.16
432
ms
ROM mode transition wait time 1
t
DIS
2
—
—
2
—
—
μs
ROM mode transition wait time 2
t
MS
5
—
—
5
—
—
μs