R01UH0092EJ0110 Rev.1.10
Page 656 of 807
Jul 31, 2012
M16C/64C Group
30. Flash Memory
30. Flash Memory
30.1
Introduction
This product uses flash memory as ROM. In this chapter, flash memory refers to the flash memory inside
the MCU.
In this product, the flash memory can perform in three rewrite modes: CPU rewrite mode, standard serial
I/O mode, and parallel I/O mode.
Table 30.1 lists Flash Memory Specifications (see Table 1.1 to Table 1.2 “Specifications” for the items not
listed in Table 30.1).
Table 30.1
Flash Memory Specifications
Item
Specification
Flash memory rewrite modes
3 modes (CPU rewrite, standard serial I/O, and parallel I/O)
Erase block
Program ROM 1
See Figure 30.1 “Flash Memory Block Diagram”.
Program ROM 2
1 block (16 KB)
Data flash
2 blocks (4 KB each)
Program method
In 2-word (4-byte) units
Erase method
Block erase
Program and erase control method
Program and erase controlled by software commands
Suspend function
Program suspend and erase suspend
Protect method
A lock bit protects each block.
Number of commands
8
Program and erase
cycles
Program ROM 1 and
program ROM 2
1,000 times
(1)
Data flash
10,000 times
(1)
Data retention
20 years
Flash memory rewrite disable function
Parallel I/O mode
ROM code protect function
Standard serial I/O mode
ID code check function, forced erase function, and standard serial I/O
mode disable function
User boot function
User boot mode
Note:
1.
Definition of program and erase cycles:
The program and erase cycles is the number of erase operations performed on a per-block
basis. For example, assume that a 4 KB block is programmed in 1,024 operations, writing
2 words at a time, and erased thereafter. In this case, the block is considered to have been
programmed and erased once.
If the program and erase cycles are 1,000 times, each block can be erased up to 1,000 times.
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