Rev. 1.00, 05/04, page 447 of 544
START
End of programming
Set SWE bit in FLMCR1
Start of programming
Write pulse application subroutine
Wait (x)
µ
s
Sub-Routine Write Pulse
End Sub
Set PSU bit in FLMCR2
WDT enable
Disable WDT
Number of Writes n
1
2
3
4
5
6
7
8
9
10
11
12
13
998
999
1000
Note 7: Write Pulse Width
Write Time (z)
µ
s
z1
z1
z1
z1
z1
z1
z2
z2
z2
z2
z2
z2
z2
z2
z2
z2
Wait (
γ
)
µ
s
Set P bit in FLMCR1
Wait (z1)
µ
s, (z2)
µ
s or (z3)
µ
s
Clear P bit in FLMCR1
Wait (
α
)
µ
s
Clear PSU bit in FLMCR2
Wait (
β
)
µ
s
n = 1
m = 0
NG
NG
NG
NG
NG
OK
OK
OK
Wait (
γ
)
µ
s
Wait (
ε
)
µ
s
*
2
*
4
*
5
*
1
Wait (
η
)
µ
s
Apply write pulse z1
µ
s or z2
µ
s
Sub-Routine-Call
Set PV bit in FLMCR1
H'FF dummy write to verify address
Read verify data
Write data =
verify data?
*
4
*
3
*
3
*
1
Transfer reprogram data to reprogram data area
Reprogram data computation
*
4
Transfer additional-programming data to
additional-programming data area
Additional-programming data computation
Clear PV bit in FLMCR1
Clear SWE bit in FLMCR1
m = 1
See Note 7 for pulse width
m = 0 ?
Increment address
Programming failure
OK
Clear SWE bit in FLMCR1
Wait (
θ
)
µ
s
µ
s
OK
6
≥
n?
NG
OK
6
≥
n ?
Wait (
θ
)
µ
s
n
≥
(N)?
n
←
n + 1
Original Data
(D)
Verify Data
(V)
Reprogram Data
(X)
Comments
Programming completed
Still in erased state; no action
Programming incomplete;
reprogram
Note: Use a z3
µ
s write pulse for additional programming.
Write 128-byte data in RAM reprogram
data area consecutively to flash memory
RAM
Program data storage
area (128 bytes)
Reprogram data storage
area (128 bytes)
Additional-programming
data storage area
(128 bytes)
Store 128-byte program data in program
data area and reprogram data area
Apply write pulse (Additional programming)
128-byte
data verification completed?
Successively write 128-byte data from additional-
programming data area in RAM to flash memory
Reprogram Data Computation Table
Reprogram Data
(X')
Verify Data
(V)
Additional-
Programming Data (Y)
1
1
1
1
0
1
0
0
0
0
1
1
Comments
Additional programming
to be executed
Additional programming
not to be executed
Additional programming
not to be executed
0
1
1
1
0
1
0
1
0
0
1
1
Additional-Programming Data Computation Table
Perform programming in the erased state.
Do not perform additional programming
on previously programmed addresses.
Notes: 1. Data transfer is performed by byte transfer. The lower 8 bits of the first address written to must be H'00 or H'80. A 128-byte data transfer must be performed even if
writing fewer than 128 bytes; in this case, H'FF data must be written to the extra addresses.
2. Verify data is read in 16-bit (word) units.
3. Even bits for which programming has been completed will be subjected to programming once again if the result of the subsequent verify operation is NG.
4. A 128-byte area for storing program data, a 128-byte area for storing reprogram data, and a 128-byte area for storing additional data must be provided in RAM.
The contents of the reprogram data area and additional data area are modified as programming proceeds.
5. A write pulse of z1
µ
s or z2
µ
s is applied according to the progress of the programming operation. See Note7 for details of the pulse widths. When writing of
additional-programming data is executed, a z3
µ
s write pulse should be applied. Reprogram data X' means reprogram data when the write pulse is applied.
6. The values of x, y, z1, z2, z3,
α
,
β
,
γ
,
ε
,
η
,
θ
, and N are shown in section 22.5, Flash Memory Characteristics.
Figure 18.9 Program/Program-Verify Flowchart
Содержание H8S/2111B
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