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LTE Standard Module Series
EG915U_Series_Hardware_Design 44 / 81
Module
USIM_VDD
GND
USIM_RST
USIM_CLK
USIM_DATA
USIM_DET
0R
0R
0R
VDD_EXT
51K
100 nF
GND
GND
33 pF
33 pF 33 pF
VCC
RST
CLK
IO
VPP
GND
GND
USIM_VDD
15K
(U)SIM Card Connector
Switch
Figure 20: Reference Circuit of (U)SIM Interface with an 8-Pin (U)SIM Card Connector
If (U)SIM card detection function is not needed, please keep USIM_DET unconnected. A reference circuit
for (U)SIM interface with a 6-pin (U)SIM card connector is illustrated in the following figure.
Module
USIM_VDD
GND
USIM_RST
USIM_CLK
USIM_DATA
0R
0R
0R
100 nF
GND
33 pF 33 pF 33 pF
VCC
RST
CLK
IO
VPP
GND
GND
15K
USIM_VDD
(U)SIM Card Connector
Figure 21: Reference Circuit of (U)SIM Interface with a 6-Pin (U)SIM Card Connector
To enhance the reliability and availability of the (U)SIM card in applications, follow the criteria below in
(U)SIM circuit design:
⚫
Place (U)SIM card connector as close to the module as possible. Keep the trace length less than
200 mm as far as possible.
⚫
Keep (U)SIM card signals away from RF and VBAT traces.
⚫
Ensure the USIM_VDD has a bypass capacitor less than 1 µF, and the capacitor should be close to
the (U)SIM card connector.