Philips CGY2014TT Скачать руководство пользователя страница 3 | Manualshive

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2000 Oct 16

3

Philips Semiconductors

Product specification

GSM/DCS/PCS power amplifier

CGY2014TT

BLOCK DIAGRAM

handbook, full pagewidth

CGY2014TT

9

GND

RFO/VDD3LB

n.c.

RFO/VDD3HB

RFILB

RFIHB

13, 14

FCA180

VDD1HB

VDD1LB VDD2LB

VDD2HB

7

GND1LB

8

6

2

15

3

4, 5

17, 18

1, 10, 11, 12,

16, 19, 20

Fig.1 Block diagram.

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Содержание CGY2014TT

Страница 1: ...DATA SHEET Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits IC17 2000 Oct 16 INTEGRATED CIRCUITS CGY2014TT GSM DCS PCS power amplifier ...

Страница 2: ...C power amplifier The circuit is specifically designed to operate at 3 6 V battery supply voltage The power amplifier requires only a 30 dB harmonic low pass filter to comply with the transmit spurious specification The voltages applied on pins VDD drain control the power of the power amplifier and permit to switch it off QUICK REFERENCE DATA ORDERING INFORMATION SYMBOL PARAMETER MIN TYP MAX UNIT ...

Страница 3: ...ification GSM DCS PCS power amplifier CGY2014TT BLOCK DIAGRAM handbook full pagewidth CGY2014TT 9 GND RFO VDD3LB n c RFO VDD3HB RFILB RFIHB 13 14 FCA180 VDD1HB VDD1LB VDD2LB VDD2HB 7 GND1LB 8 6 2 15 3 4 5 17 18 1 10 11 12 16 19 20 Fig 1 Block diagram ...

Страница 4: ... third stage supply voltage RFO VDD3HB 18 DCS PCS power amplifier output and third stage supply voltage n c 19 not connected n c 20 not connected exposed die ground FUNCTIONAL DESCRIPTION Operating conditions The CGY2014TT is designed to meet the European Telecommunications Standards Institute ETSI GSM documents the ETS 300 577 specification which are defined as follows ton 570 µs T 4 16 ms Duty c...

Страница 5: ... a drain MOS switch with RDSon 40 mΩ The battery voltage is 3 6 V typical value 2 No RF input signal or Pi LB 30 dBm VDD 1 V 3 No RF input signal or Pi HB 30 dBm VDD 1 V SYMBOL PARAMETER CONDITIONS MAX UNIT VDD positive supply voltage 5 2 V Tj max maximum operating junction temperature 150 C Tstg storage temperature 150 C Ptot total power dissipation note 1 2 0 W Pi LB GSM input power 10 dBm Pi HB...

Страница 6: ...requency range 880 915 MHz Po LB max maximum output power see Figs 3 and 4 34 5 35 dBm ηLB efficiency see Fig 3 50 55 Po LB min minimum output power VDD 0 V Pi LB 0 dBm 35 dBm NRX LB output noise in RX band Pi LB 0 dBm fRF 925 to 935 MHz 117 dBm Hz fRF 935 to 960 MHz 129 dBm Hz H2LB 2nd harmonic level Pi LB 0 dBm 35 dBc H3LB 3rd harmonic level Pi LB 0 dBm 35 dBc StabLB stability Pi LB 0 dBm note 1...

Страница 7: ...t power as a function of the supply voltage 1 Tamb 85 C 2 Tamb 25 C 3 Tamb 20 C fRF LB 900 MHz Pi LB 0 dBm VDD1 LB 3 V VDD VDD2 LB VDD3 LB Performance characteristics in DCS band handbook halfpage 1650 1700 Po dBm 1750 1850 35 5 34 5 32 5 31 5 33 5 η 55 45 25 15 35 1800 fRF MHz FCA172 3 2 1 3 2 1 output power efficiency Fig 5 Output power and efficiency as a function of the frequency 1 Tamb 85 C 2...

Страница 8: ... 4 7 pF 9 1 pF 100 pF 3 pF 2 7 pF 5 6 pF 3 3 kΩ 1 nF n c n c n c n c n c n c 1 GND RFIHB VDD1HB VDD2HB VDD2HB VDD2LB VDD1LB RFO VDD3HB RFoutDCS RFoutGSM Vpin RFO VDD3HB RFO VDD3LB RFO VDD3LB GND1LB Vd23GSM Fig 7 Application diagram 1 Pin 16 is internally connected to ground and should not be connected to the board 2 Transmission lines Thickness 0 4 mm substrate FR4 and εr 4 7 TRL1 width 500 µm len...

Страница 9: ... power amplifier CGY2014TT handbook full pagewidth FCA175 CGY2014TT 3 pF 4 7 pF 9 1 pF 4 pF 1 pF 100 pF 100 pF 1 nF 6 pF 3 3 nH 4 7 pF 3 9 nH 10 nF 2 7 pF 100 pF 5 6 pF BA891 56 pF 3 3 kΩ 1 nF Fig 8 Part of layout of Philips demoboard Dimensions approximately 19 mm 19 mm ...

Страница 10: ... 0 65 6 6 6 2 0 5 0 2 8 0 o o 0 13 0 1 0 2 1 0 DIMENSIONS mm are the original dimensions Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic interlead protrusions of 0 25 mm maximum per side are not included 0 75 0 50 SOT527 1 99 11 12 00 07 12 w M bp D Dh Eh Z heathsink side e 0 25 1 10 20 11 θ A A1 A2 Lp detail X L A 3 HE E c v M A X A y 0 2 5 5 mm scale H...

Страница 11: ...ing can present major problems To overcome these problems the double wave soldering method was specifically developed If wave soldering is used the following conditions must be observed for optimal results Use a double wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave For packages with leads on two sides and a pitch e larger than or equal...

Страница 12: ...ersion can not be achieved and as solder may stick to the heatsink on top version 3 If wave soldering is considered then the package must be placed at a 45 angle to the solder wave direction The package footprint must incorporate solder thieves downstream and at the side corners 4 Wave soldering is only suitable for LQFP TQFP and QFP packages with a pitch e equal to or larger than 0 8 mm it is def...

Страница 13: ...o the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Phil...

Страница 14: ...2000 Oct 16 14 Philips Semiconductors Product specification GSM DCS PCS power amplifier CGY2014TT NOTES ...

Страница 15: ...2000 Oct 16 15 Philips Semiconductors Product specification GSM DCS PCS power amplifier CGY2014TT NOTES ...

Страница 16: ...A MI Tel 39 039 203 6838 Fax 39 039 203 6800 Japan Philips Bldg 13 37 Kohnan 2 chome Minato ku TOKYO 108 8507 Tel 81 3 3740 5130 Fax 81 3 3740 5057 Korea Philips House 260 199 Itaewon dong Yongsan ku SEOUL Tel 82 2 709 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 9 ...

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