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Internet: http://www.semiconductors.philips.com

2000

70

Philips Semiconductors – a worldwide company

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
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Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
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Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
Tel. +66 2 361 7910, Fax. +66 2 398 3447

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553

Printed in The Netherlands

403506/02/pp

16

 Date of release:

2000 Oct 16

Document order number:

 9397 750 07455

Содержание CGY2014TT

Страница 1: ...DATA SHEET Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits IC17 2000 Oct 16 INTEGRATED CIRCUITS CGY2014TT GSM DCS PCS power amplifier ...

Страница 2: ...C power amplifier The circuit is specifically designed to operate at 3 6 V battery supply voltage The power amplifier requires only a 30 dB harmonic low pass filter to comply with the transmit spurious specification The voltages applied on pins VDD drain control the power of the power amplifier and permit to switch it off QUICK REFERENCE DATA ORDERING INFORMATION SYMBOL PARAMETER MIN TYP MAX UNIT ...

Страница 3: ...ification GSM DCS PCS power amplifier CGY2014TT BLOCK DIAGRAM handbook full pagewidth CGY2014TT 9 GND RFO VDD3LB n c RFO VDD3HB RFILB RFIHB 13 14 FCA180 VDD1HB VDD1LB VDD2LB VDD2HB 7 GND1LB 8 6 2 15 3 4 5 17 18 1 10 11 12 16 19 20 Fig 1 Block diagram ...

Страница 4: ... third stage supply voltage RFO VDD3HB 18 DCS PCS power amplifier output and third stage supply voltage n c 19 not connected n c 20 not connected exposed die ground FUNCTIONAL DESCRIPTION Operating conditions The CGY2014TT is designed to meet the European Telecommunications Standards Institute ETSI GSM documents the ETS 300 577 specification which are defined as follows ton 570 µs T 4 16 ms Duty c...

Страница 5: ... a drain MOS switch with RDSon 40 mΩ The battery voltage is 3 6 V typical value 2 No RF input signal or Pi LB 30 dBm VDD 1 V 3 No RF input signal or Pi HB 30 dBm VDD 1 V SYMBOL PARAMETER CONDITIONS MAX UNIT VDD positive supply voltage 5 2 V Tj max maximum operating junction temperature 150 C Tstg storage temperature 150 C Ptot total power dissipation note 1 2 0 W Pi LB GSM input power 10 dBm Pi HB...

Страница 6: ...requency range 880 915 MHz Po LB max maximum output power see Figs 3 and 4 34 5 35 dBm ηLB efficiency see Fig 3 50 55 Po LB min minimum output power VDD 0 V Pi LB 0 dBm 35 dBm NRX LB output noise in RX band Pi LB 0 dBm fRF 925 to 935 MHz 117 dBm Hz fRF 935 to 960 MHz 129 dBm Hz H2LB 2nd harmonic level Pi LB 0 dBm 35 dBc H3LB 3rd harmonic level Pi LB 0 dBm 35 dBc StabLB stability Pi LB 0 dBm note 1...

Страница 7: ...t power as a function of the supply voltage 1 Tamb 85 C 2 Tamb 25 C 3 Tamb 20 C fRF LB 900 MHz Pi LB 0 dBm VDD1 LB 3 V VDD VDD2 LB VDD3 LB Performance characteristics in DCS band handbook halfpage 1650 1700 Po dBm 1750 1850 35 5 34 5 32 5 31 5 33 5 η 55 45 25 15 35 1800 fRF MHz FCA172 3 2 1 3 2 1 output power efficiency Fig 5 Output power and efficiency as a function of the frequency 1 Tamb 85 C 2...

Страница 8: ... 4 7 pF 9 1 pF 100 pF 3 pF 2 7 pF 5 6 pF 3 3 kΩ 1 nF n c n c n c n c n c n c 1 GND RFIHB VDD1HB VDD2HB VDD2HB VDD2LB VDD1LB RFO VDD3HB RFoutDCS RFoutGSM Vpin RFO VDD3HB RFO VDD3LB RFO VDD3LB GND1LB Vd23GSM Fig 7 Application diagram 1 Pin 16 is internally connected to ground and should not be connected to the board 2 Transmission lines Thickness 0 4 mm substrate FR4 and εr 4 7 TRL1 width 500 µm len...

Страница 9: ... power amplifier CGY2014TT handbook full pagewidth FCA175 CGY2014TT 3 pF 4 7 pF 9 1 pF 4 pF 1 pF 100 pF 100 pF 1 nF 6 pF 3 3 nH 4 7 pF 3 9 nH 10 nF 2 7 pF 100 pF 5 6 pF BA891 56 pF 3 3 kΩ 1 nF Fig 8 Part of layout of Philips demoboard Dimensions approximately 19 mm 19 mm ...

Страница 10: ... 0 65 6 6 6 2 0 5 0 2 8 0 o o 0 13 0 1 0 2 1 0 DIMENSIONS mm are the original dimensions Notes 1 Plastic or metal protrusions of 0 15 mm maximum per side are not included 2 Plastic interlead protrusions of 0 25 mm maximum per side are not included 0 75 0 50 SOT527 1 99 11 12 00 07 12 w M bp D Dh Eh Z heathsink side e 0 25 1 10 20 11 θ A A1 A2 Lp detail X L A 3 HE E c v M A X A y 0 2 5 5 mm scale H...

Страница 11: ...ing can present major problems To overcome these problems the double wave soldering method was specifically developed If wave soldering is used the following conditions must be observed for optimal results Use a double wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave For packages with leads on two sides and a pitch e larger than or equal...

Страница 12: ...ersion can not be achieved and as solder may stick to the heatsink on top version 3 If wave soldering is considered then the package must be placed at a 45 angle to the solder wave direction The package footprint must incorporate solder thieves downstream and at the side corners 4 Wave soldering is only suitable for LQFP TQFP and QFP packages with a pitch e equal to or larger than 0 8 mm it is def...

Страница 13: ...o the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Applications that are described herein for any of these products are for illustrative purposes only Phil...

Страница 14: ...2000 Oct 16 14 Philips Semiconductors Product specification GSM DCS PCS power amplifier CGY2014TT NOTES ...

Страница 15: ...2000 Oct 16 15 Philips Semiconductors Product specification GSM DCS PCS power amplifier CGY2014TT NOTES ...

Страница 16: ...A MI Tel 39 039 203 6838 Fax 39 039 203 6800 Japan Philips Bldg 13 37 Kohnan 2 chome Minato ku TOKYO 108 8507 Tel 81 3 3740 5130 Fax 81 3 3740 5057 Korea Philips House 260 199 Itaewon dong Yongsan ku SEOUL Tel 82 2 709 1412 Fax 82 2 709 1415 Malaysia No 76 Jalan Universiti 46200 PETALING JAYA SELANGOR Tel 60 3 750 5214 Fax 60 3 757 4880 Mexico 5900 Gateway East Suite 200 EL PASO TEXAS 79905 Tel 9 ...

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