CBTD3306
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 1 May 2012
3 of 17
NXP Semiconductors
CBTD3306
Dual bus switch with level shifting
6.2 Pin description
7. Functional
description
[1]
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.
8. Limiting
values
[1]
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under
Section 9.
is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
[2]
The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
9. Recommended operating conditions
Table 3.
Pin description
Symbol
Pin
Description
1OE, 2OE
1, 7
output enable input
1A, 2A
2, 5
data input/output (A port)
1B, 2B
3, 6
data input/output (B port)
GND
4
ground (0 V)
V
CC
8
positive supply voltage
Table 4.
Function selection
[1]
Input
Input/output
nOE
nA, nB
L
nA = nB
H
Z
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
T
amb
=
−
40
°
C to +85
°
C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
supply voltage
−
0.5
+7.0
V
V
I
input voltage
[2]
−
0.5
+7.0
V
I
SW
switch current
-
128
mA
I
IK
input clamping current
V
I/O
= 0 V
−
50
-
mA
T
stg
storage temperature
−
65
+150
°
C
Table 6.
Operating conditions
All unused control inputs of the device must be held at V
CC
or GND to ensure proper device operation.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
CC
supply voltage
4.5
-
5.5
V
V
IH
HIGH-level input voltage
2.0
-
-
V
V
IL
LOW-level input voltage
-
-
0.8
V
T
amb
ambient temperature
operating in free air
−
40
-
+85
°
C