Panasonic Transistors 2SC3930G, Технические характеристики

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Transistors
1 Publication date: April 2007 SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■
Features
•
Optimum for RF amplification of FM/AM radios
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■
Absolute Maximum Ratings T
a
=
25
°
C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
30 V
Collector-emitter voltage (Base open) V
CEO
20 V
Emitter-base voltage (Collector open) V
EBO
5 V
Collector current I
C
30 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°
C
Storage temperature T
stg
−
55 to
+
150
°
C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) I
CBO
V
CB
=
10 V, I
E
=
0 0.1
µ
A
Forward current transfer ratio
*
h
FE
V
CB
=
10 V, I
E
= −
1 mA 70 220

Transition frequency f
T
V
CB
=
10 V, I
E
= −
1 mA, f
=
200 MHz 150 250 MHz
Noise figure NF V
CB
=
10 V, I
E
= −
1 mA, f
=
5 MHz 2.8 4.0 dB
Reverse transfer impedance Z
rb
V
CB
=
10 V, I
E
= −
1 mA, f
=
2 MHz 22 50
Ω
Reverse transfer capacitance C
re
V
CB
=
10 V, I
E
= −
1 mA, f
=
10.7 MHz 0.9 1.5 pF
(Common emitter)
■
Electrical Characteristics T
a
=
25
°
C
±
3
°
C
Rank B C
h
FE
70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■
Package
•
Code
SMini3-F2
•
Marking Symbol: V
•
Pin Name
1. Base
2. Emitter
3. Collector