background image

2SC2480

3

SJC00116CED

Z

rb

 

 I

E

G

P

 

 I

E

NF 

 I

E

b

ib

 

 g

ib

b

rb

 

 g

rb

b

fb

 

 g

fb

b

ob

 

 g

ob

 0.1

1

10

Reverse transfer impedance  Z

rb

  (

)

0

120

100

80

60

40

20

V

CB

 

=

 10 V

=

 2 MHz

T

a

 

=

 25

°

C

Emitter current  I

E

  (mA)

 0.1

1

10

100

Power gain  

G

P

  (dB)

0

40

35

30

25

20

15

10

5

V

CB

 

=

 10 V

=

 100 MHz

R

g

 

=

 50 

T

a

 

=

 25

°

C

Emitter current  I

E

  (mA)

Noise figure  NF  (dB)

0

12

10

8

6

4

2

 0.1

1

10

100

V

CB

 

=

 10 V

=

 100 MHz

R

g

 

=

 50 k

T

a

 

=

 25

°

C

Emitter current  I

E

  (mA)

60

0

50

40

30

20

10

0

10

20

30

40

50

Input conductance  g

ib

  (mS)

Input susceptance  b

ib

  (mS)

y

ib

 

=

 g

ib

 

+

 jb

ib

V

CB

 

=

 10 V

=

 900 MHz

I

E

 

=

 

2 mA

5 mA

300

500

600

200

2.4

1.0

0

 0.2

 0.4

 0.6

 0.8

0

 0.4

 0.8

1.2

1.6

2.0

=

 900 MHz

I

E

 

=

 

5 mA

2 mA

300

500

600

200

Reverse transfer conductance  g

rb

  (mS)

Reverse transfer susceptance  b

rb

  (mS)

y

rb

 

=

 g

rb

 

+

 jb

rb

V

CB

 

=

 10 V

0

60

40

20

0

20

40

48

40

32

24

16

8

2 mA

300

500

600

900

=

 200 MHz

I

E

 

=

 

5 mA

Forward transfer conductance  g

fb

  (mS)

Forward transfer susceptance  b

fb

  (mS)

y

fb

 

=

 g

fb

 

+

 jb

fb

V

CB

 

=

 10 V

0

0

2.0

1.6

1.2

0.8

0.4

12

10

8

6

4

2

5 mA

300

500

600

900

=

 200 MHz

I

E

 

=

 

2 mA

Output conductance  g

ob

  (mS)

Output susceptance  b

ob

  (mS)

y

ob

 

=

 g

ob

 

+

 jb

ob

V

CE

 

=

 10 V

This product complies with the RoHS Directive (EU 2002/95/EC).

Содержание Transistors 2SC2480

Страница 1: ... 0 3 V Base emitter voltage VBE VCB 10 V IE 2 mA 720 mV Forward current transfer ratio hFE VCB 10 V IE 2 mA 25 250 Transition frequency fT VCB 10 V IE 15 mA f 200 MHz 800 1300 1600 MHz Reverse transfer capacitance Crb VCE 6 V IC 0 f 1 MHz 0 8 pF Common base Reverse transfer capacitance Cre VCB 10 V IE 1 mA f 10 7 MHz 1 0 1 5 pF Common emitter Power gain GP VCB 10 V IE 1 mA f 200 MHz 20 dB Unit mm ...

Страница 2: ...Base current I B µA 0 0 2 0 1 6 1 2 0 8 0 4 60 50 40 30 20 10 VCE 10 V Ta 75 C 25 C 25 C Base emitter voltage VBE V Collector current I C mA 0 0 1 240 200 160 120 80 40 1 10 100 Ta 75 C 25 C 25 C Forward current transfer ratio h FE VCE 10 V Collector current IC mA 0 01 0 1 0 1 1 10 100 1 10 100 Collector emitter saturation voltage V CE sat V Collector current IC mA IC IB 10 Ta 75 C 25 C 25 C 0 1 1...

Страница 3: ...e gib mS Input susceptance b ib mS yib gib jbib VCB 10 V f 900 MHz IE 2 mA 5 mA 300 500 600 200 2 4 1 0 0 0 2 0 4 0 6 0 8 0 0 4 0 8 1 2 1 6 2 0 f 900 MHz IE 5 mA 2 mA 300 500 600 200 Reverse transfer conductance grb mS Reverse transfer susceptance b rb mS yrb grb jbrb VCB 10 V 0 60 40 20 0 20 40 48 40 32 24 16 8 2 mA 300 500 600 900 f 200 MHz IE 5 mA Forward transfer conductance gfb mS Forward tra...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

Отзывы: