background image

2SC2480

2

SJC00116CED

I

B

 

 V

BE

I

C

 

 V

BE

h

FE

 

 I

C

P

C

 

 T

a

I

C

 

 V

CE

I

C

 

 I

B

V

CE(sat)

 

 I

C

f

T

 

 I

E

C

re

 

 V

CE

0

160

40

120

80

0

240

200

160

120

80

40

Ambient temperature  T

a

  (

°

C)

Collector power dissipation  P

C

  (mW)

0

24

20

16

12

8

4

0

4

8

12

16

I

B

 

=

 300 

µ

A

50 

µ

A

100 

µ

A

150 

µ

A

200 

µ

A

250 

µ

A

Collector-emitter voltage  V

CE

  (V)

Collector current  I

C

  (mA)

T

a

 

=

 25

°

C

0

0

500

400

300

200

100

24

20

16

12

8

4

Base current  I

B

  (

µ

A)

Collector current  

I

C

  

(mA)

V

CE

 

=

 10 V

T

a

 

=

 25

°

C

0

400

350

300

250

200

150

100

50

0

2.0

1.6

1.2

0.8

0.4

V

CE

 

=

 10 V

T

a

 

=

 25

°

C

Base-emitter voltage  V

BE

  (V)

Base current  I

B

  (

µ

A)

0

0

2.0

1.6

1.2

0.8

0.4

60

50

40

30

20

10

V

CE

 

=

 10 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Base-emitter voltage  V

BE

  (V)

Collector current  I

C

  (mA)

0

0.1

240

200

160

120

80

40

1

10

100

T

a

 

=

 75

°

C

25

°

C

25

°

C

Forward current transfer ratio  h

FE

V

CE

 

=

 10 V

Collector current  I

C

  (mA)

0.01

0.1

0.1

1

10

100

1

10

100

Collector-emitter saturation voltage  V

CE(sat)

  (V)

Collector current  I

C

  (mA)

I

C

 

/

 I

B

 

=

 10

T

a

 

=

 75

°

C

25

°

C

–25

°

C

 0.1

1

10

100

0

1 600

1 400

1 200

1 000

800

600

400

200

Transition frequency  f

T

  (MHz)

Emitter current  I

E

  (mA)

V

CB

 

=

 10 V

T

a

 

=

 25

°

C

0

2.4

2.0

1.6

1.2

0.8

0.4

0.1

1

10

100

Collector-emitter voltage  V

CE

  (V)

I

C

 

=

 1 mA

=

 10.7 MHz

T

a

 

=

 25

°

C

Reverse transfer capacitance  

C

re

  (pF)

  (Common emitter)

This product complies with the RoHS Directive (EU 2002/95/EC).

Содержание Transistors 2SC2480

Страница 1: ... 0 3 V Base emitter voltage VBE VCB 10 V IE 2 mA 720 mV Forward current transfer ratio hFE VCB 10 V IE 2 mA 25 250 Transition frequency fT VCB 10 V IE 15 mA f 200 MHz 800 1300 1600 MHz Reverse transfer capacitance Crb VCE 6 V IC 0 f 1 MHz 0 8 pF Common base Reverse transfer capacitance Cre VCB 10 V IE 1 mA f 10 7 MHz 1 0 1 5 pF Common emitter Power gain GP VCB 10 V IE 1 mA f 200 MHz 20 dB Unit mm ...

Страница 2: ...Base current I B µA 0 0 2 0 1 6 1 2 0 8 0 4 60 50 40 30 20 10 VCE 10 V Ta 75 C 25 C 25 C Base emitter voltage VBE V Collector current I C mA 0 0 1 240 200 160 120 80 40 1 10 100 Ta 75 C 25 C 25 C Forward current transfer ratio h FE VCE 10 V Collector current IC mA 0 01 0 1 0 1 1 10 100 1 10 100 Collector emitter saturation voltage V CE sat V Collector current IC mA IC IB 10 Ta 75 C 25 C 25 C 0 1 1...

Страница 3: ...e gib mS Input susceptance b ib mS yib gib jbib VCB 10 V f 900 MHz IE 2 mA 5 mA 300 500 600 200 2 4 1 0 0 0 2 0 4 0 6 0 8 0 0 4 0 8 1 2 1 6 2 0 f 900 MHz IE 5 mA 2 mA 300 500 600 200 Reverse transfer conductance grb mS Reverse transfer susceptance b rb mS yrb grb jbrb VCB 10 V 0 60 40 20 0 20 40 48 40 32 24 16 8 2 mA 300 500 600 900 f 200 MHz IE 5 mA Forward transfer conductance gfb mS Forward tra...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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