1
Transistors
Publication date: June 2006
SJC00116CED
2SC2480
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■
Features
•
High transition frequency f
T
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
100
µ
A, I
E
=
0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
3
V
Base-emitter voltage
V
BE
V
CB
=
10 V, I
E
=
−
2 mA
720
mV
Forward current transfer ratio
h
FE
V
CB
=
10 V, I
E
=
−
2 mA
25
250
Transition frequency
*
f
T
V
CB
=
10 V, I
E
=
−
15 mA, f
=
200 MHz
800
1 300
1 600
MHz
Reverse transfer capacitance
C
rb
V
CE
=
6 V, I
C
=
0, f
=
1 MHz
0.8
pF
(Common base)
Reverse transfer capacitance
C
re
V
CB
=
10 V, I
E
=
−
1 mA, f
=
10.7 MHz
1.0
1.5
pF
(Common emitter)
Power gain
G
P
V
CB
=
10 V, I
E
=
−
1 mA, f
=
200 MHz
20
dB
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1: Base
2: Emitter
3: Collector
JEITA: SC-59A
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
Marking Symbol: R
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
T
S
No-rank
f
T
800 to 1 400
1 000 to 1 600
800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).
