Panasonic Transistors 2SC1318, Технические характеристики

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Transistors
Publication date : October 2008 SJC00420AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318
Silicon NPN epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SA0720

Features

Low collector-emitter saturation voltage V
CE(sat)

Complementary pair with 2SA0720

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
60 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
7 V
Collector current I
C
0.5 A
Peak collector current I
CP
1 A
Collector power dissipation P
C
625 mW
Junction temperature T
j
150 ° C
Storage temperature T
stg
–55 to +150 ° C

Electrical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 m A, I
E
= 0 60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= 10 mA, I
B
= 0 50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 m A, I
C
= 0 7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 0 0.1 m A
Forward current transfer ratio
h
FE1
* V
CE
= 10 V, I
C
= 150 mA 85 340

h
FE2
V
CE
= 10 V, I
C
= 500 mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= 300 mA, I
B
= 30 mA 0.35 0.60 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 300 mA, I
B
= 30 mA 1.1 1.5 V
Transition frequency f
T
V
CB
= 10 V, I
E
= –50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
C
re
V
CB
= 10 V, I
E
= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classi fi cation
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340

Package

Code
TO-92B-B1

Pin Name
1. Emitter
2. Collector
3. Base