Panasonic MTM86627, Техническое описание

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MTM86627
SJF00085AED
4
This product complies with the RoHS Directive (EU 2002/95/EC).
P
D
 T
a
I
D
 V
DS
R
DS(on)
 V
GS
R
DS(on)
 I
D
C
X
 V
DS
0
40
80
160 120
0
400
200
600
MTM86627_ P
D
-T
a
Drain power dissipation
P
D
(mW)
Ambient temperature T
a
( ° C)
Single unit
Measuring on ceramic substrate at
40 mm × 38 mm × 0.8 mm
0 − 0.2 − 0.4 − 1.0 − 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86627_ I
D
-V
DS
Drain current
I
D
(A)
Drain-source voltage V
DS
(V)
− 1.1 V
− 1.0 V
− 0.9 V
− 0.8 V
V
GS
= − 1.3 V
0 − 2 − 8 − 6 − 4
10
100
1 000
MTM86627_ R
DS(on)
-V
GS
Drain-source ON resistance
R
DS(on)
(
Ω
)
Gate-source voltage V
GS
(V)
I
D
= − 1.0 A
0 − 0.5 − 1.0 − 1.5 − 2.0
10 − 2
10 − 1
1
MTM86627_
R
DS(on)
-
I
D
Drain-source ON resistance
R
DS(on)
(
Ω
)
Drain current I
D
(A)
V
GS
= 1.8 V
4.0 V
2.5 V
− 5 0 − 15 − 20 − 10
0
100
200
300
400
MTM86627_
C
X
-
V
DS
Drain-source voltage V
DS
(V)
Short-circuit input capacitance (Common source
)
C
iss
,
Short-circuit output capacitance (Common source
)
C
oss
,
Reverse transfer capacitance (Common source)
C
rss
(pF)
C
iss
C
oss
C
rss
Characteristics charts of FET
Characteristics charts of SBD
I
F
 V
F
I
R
 V
R
C
t
 V
R
0 0.2 0.6 0.4
1
10 − 1
10 − 5
10 − 4
10 − 3
10 − 2
MTM86627_I
F
-V
F
Forward current
I
F
(
A
)
Forward voltage V
F
(V)
T
a
= 75 ° C
− 25 ° C
25
°
C
0 10 20
10 − 1
10
10 2
10 3
1
MTM86627_I
R
-V
R
Reverse current
I
R
(
µ
A
)
Reverse voltage V
R
(V)
T
a
= 75 ° C
− 25 ° C
25
°
C
0 20 10
0
40
20
60
80
100
MTM86627_C
t
-V
R
Te
rminal capacitance
C
t
(pF)
Reverse voltage V
R
(V)
f = 1 MHz
T
a
= 25 ° C