MTM86627
2
SJF00085AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
FET
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
I
D
= –1.0 mA, V
GS
= 0
–20
V
Drain-source cutoff current
I
DSS
V
DS
= –20 V, V
GS
= 0
–1.0
m
A
Gate-source cutoff current
I
GSS
V
GS
=
±
8 V, V
DS
= 0
±
10
m
A
Gate threshold voltage
V
TH
I
D
= –1.0 mA, V
DS
= –10 V
– 0.4
– 0.75
–1.1
V
Drain-source ON resistance
*1
R
DS(on)
I
D
= –1.0 A, V
GS
= –4.0 V
80
120
m
W
I
D
= –1.0 A, V
GS
= –2.5 V
100
170
I
D
= – 0.5 A, V
GS
= –1.8 V
140
230
Forward transfer admittance
*1
Y
fs
I
D
= –1.0 A, V
DS
= –10 V, f = 1 MHz
3.0
S
Short-circuit input capacitance (Common source)
C
iss
V
DS
= –10 V, V
GS
= 0, f = 1 MHz
300
pF
Short-circuit output capacitance (Common source)
C
oss
30
pF
Reverse transfer capacitance (Common source)
C
rss
35
pF
Turn-on delay time
*2
t
d(on)
V
DD
= –10 V, V
GS
= 0 V to –4 V, I
D
= –1 A
6
ns
Rise time
*2
t
r
8
ns
Turn-off delay time
*2
t
d(off)
V
DD
= –10 V, V
GS
= –4 V to 0 V, I
D
= –1 A
57
ns
Fall time
*2
t
f
55
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: t
on
, t
off
measurement circuit
V
CC
=
−
10 V
P
W
=
10
µ
s
Duty Cycle
≤
1%
I
D
=
−
1.0 A
R
L
=
10
Ω
V
OUT
V
IN
D
G
S
V
IN
50
Ω
t
d(on)
t
d(off)
0 V
−
4 V
V
IN
V
OUT
10%
90%
90%
10%
t
r
t
f
SBD
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 500 mA
0.42
V
I
F
= 700 mA
0.45
V
Reverse current
I
R
V
R
= 6 V
90
m
A
V
R
= 15 V
250
m
A
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
