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EVBUM2528/D

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12

TESTING WITHOUT INSTALLING INTO A PCB

The NCP51705, SiC Driver Mini EVB can also be tested

without installing into a main PCB. However, since this
EVB was designed for small form factor there are no test
points included for connecting voltage probes. The EVB
should be hand probed carefully since the components are
very fine pitch or flying leads connected to desired probe
points can be attached. Note that the IN+/IN

 PWM

amplitude must be equal to the XVDD (5 V). The 20 V DC
bias (VDD and GND) is on the secondary side of the digital
isolator and therefore has a separate/isolated return ground

from the 5 V DC bias (XVDD and XGND). The
recommended series load of 470 pF and 4.99 

W

 is close to

what might be representative of a SiC gate drive input
impedance. Leaded passive components can be soldered
into the T0

247 holes as shown in Figure 15

.

 Alternatively,

a T0

247 SiC MOSFET can also be soldered in place for Q1

and used as a load for the NCP51705.  Note that testing
without installing into a power stage, leaves the DESAT pin
open since there is no active drain signal. The effect of
operating DESAT this way is explained in section ‘DESAT’

.

Figure 15. Test Configuration of EVB without Installing into Main PCB

5V DC

20V DC

470pF

4.99

W

AFG 5V

PK

,

150kHz, 50%

Turn

on Procedure

1. Apply XVDD = 5 V (Voltage for primary side of

the digital isolator, U2)

2. Apply VDD = 20 V (VDD bias voltage for the

NCP5170, SiC driver, Note: UVLO

ON 

= 17 V)

3. Apply IN+=5V

PK

, 150 kHz, 50% (Reducing the

frequency to less than ~90 kHz will show DESAT
active as described in section ‘DESAT’)

VEE

The EVB is preconfigured for VEE=0V. Operating the

EVB this way will result in switching between
0V < OUT < VDD. Several other options for negative VEE

configuration are easily set by removing/installing resistors
according to Table 3

.

 Note that R10 must be removed for any

VEE configuration other than 0 V. VDD

UVLO

 is

programmable by the UVSET resistor as described in
section ‘UVSET’ but VEE

UVLO

 is fixed at 80% of the VEE

regulate value. If desired, the NCP5170 internal VEE charge
pump can be disabled and an external negative voltage can
be applied to VEE. When providing VEE from an external
negative voltage supply, it is recommended to apply VEE
prior to VDD. Any time the internal VEE charge pump is
disabled (VEESET = 0 V), VEE

UVLO

 is disabled and is

therefore shown as “NA” in Table 3

.

Table 3. VEESET CONFIGURATION OPTIONS

VEESET

COMMENT

VEE

VEE

UVLO

VDD

Install R7 = 0 

W

, Remove R8, R9, R10 9V < VEESET < VDD

8 V

6.4 V

V5V

Install R7 = 0 

W

, Remove R7, R9, R10

5 V

4 V

OPEN

Remove R7, R8, R9, R10

3 V

2.4 V

GND

Install R9 = R10 = 0 

W

, Remove R7, R8

0 V

NA

GND

Remove R7, R8, R9, R10. Apply negative external voltage within the range of 

8V < V

EXT 

< 0V

V

EXT

NA

Содержание NCV51705

Страница 1: ...e type drive configuration The EVB can be considered as an isolator driver T0247 discrete module NCP51705 Description The NCP51705 driver is designed to primarily drive SiC MOSFET transistors To achie...

Страница 2: ...TSNK PGND VDD 5 VEESET 6 VCH 7 C 8 C VEE 24 UVSET 23 V5V UVLO PROTECTION LOGIC TSD CHARGE PUMP REG CHARGE PUMP POWER STAGE 19 DRIVER LOGIC LEVEL SHIFT VDD_OK VEE_OK CPCLK RUN 20 5V REG 16 PGND OUTSNK...

Страница 3: ...EVBUM2528 D www onsemi com 3 SUMMARY OF EVB EVB Photos Figure 2 NCP51705 EVB 35 mm x 15 mm x 5 mm Top and Bottom View T0 247 Shown for Scale...

Страница 4: ...RAMIC 25 V X7R STD 402 4 2 C4 5 470 nF GRM188R71E474KA12D CAP SMD CERAMIC 25 V X7R STD 603 5 1 C6 470 nF C1005X5R1E474K050BB CAP SMD CERAMIC 25 V X5R STD 402 6 3 C7 C9 C12 100 nF C0603C104K8RACTU CAP...

Страница 5: ...DNI RES SMD 1 10 W STD 603 17 1 R11 4 99k RC0805FR 074K99L RES SMD 1 8 W STD 805 18 1 R12 10k RC0805FR 0710KL RES SMD 1 8 W STD 805 19 1 U1 NCP51705 SiC Driver Single 6 A Single ON Semiconductor WQFN...

Страница 6: ...EVBUM2528 D www onsemi com 6 Figure 5 Bottom Assembly Figure 6 Top Layer...

Страница 7: ...EVBUM2528 D www onsemi com 7 Figure 7 Layer 2 Figure 8 Layer 3 Figure 9 Bottom Layer...

Страница 8: ...NS Ref Des Name I O GND Ref Type Description Value V J1 XGND Input Primary Plated Hole External primary ground from PWM side 0 J2 XVDD Input Primary Plated Hole External VDD from PWM side isolator bia...

Страница 9: ...conductive tape over the main PCB area directly beneath the mini EVB This is to avoid the possibility of having any components on the bottom of the mini EVB touch components or conductive surfaces on...

Страница 10: ...icient clearance between the mini EVB and T0 247 case and allow the leads to pass through the mini EVB and down through the main PCB then extending the lead length may be necessary 8 After the T0 247...

Страница 11: ...C G D S Mini EVB Mini EVB Side View Back View S Main PCB 80 0 min Figure 13 New PCB Design using 100 mil Interconnect Header Pins 80 mil minimum mounting height T0 247 SiC T0 247 SiC G D S Mini EVB Mi...

Страница 12: ...DC 470pF 4 99W AFG 5VPK 150kHz 50 Turn on Procedure 1 Apply XVDD 5 V Voltage for primary side of the digital isolator U2 2 Apply VDD 20 V VDD bias voltage for the NCP5170 SiC driver Note UVLOON 17 V 3...

Страница 13: ...l DESAT threshold is fixed at VDESAT TH 7 5V and the DESAT signal amplitude is adjustable by R11 R11 4 99 kW may not be the correct resistor value for some applications If VDESAT 7 5 V during normal o...

Страница 14: ...EVBUM2528 D www onsemi com 14 WAVEFORMS Figure 16 IN 150 kHz 50 VDESAT 5 V DESAT Inactive Figure 17 IN 80 kHz 50 VDESAT 7 5 V DESAT Active...

Страница 15: ...EVBUM2528 D www onsemi com 15 Figure 18 IN Falling to XEN Rising Delay tD1 83 ns Figure 19 IN Rising to XEN Falling Delay tD2 34 ns...

Страница 16: ...support systems or any FDA Class 3 medical devices or medical devices with a similar or equivalent classification in a foreign jurisdiction or any devices intended for implantation in the human body Y...

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