TDA8932B_3
© NXP B.V. 21 June 2007. All rights reserved.
Product data sheet
Rev. 03— 21 June 2007
20 of 48
NXP Semiconductors
TDA8932B
Class-D audio amplifier
[1]
R
s
is the series resistance of inductor and capacitor of low-pass LC filter in the application.
[2]
THD+N is measured in a bandwidth of 20 Hz to 20 kHz, AES17 brick wall.
[3]
Maximum V
ripple
= 2 V (p-p); R
s
= 0
Ω
.
[4]
B = 20 Hz to 20 kHz, AES17 brick wall.
[5]
Output power is measured indirectly; based on R
DSon
measurement.
Two layer application board (55 mm
×
45 mm), 35
µ
m copper, FR4 base material in free air with natural convection.
CMRR
common mode rejection ratio
V
i(cm)
= 1 V (RMS)
-
75
-
dB
η
po
output power efficiency
P
o
= 15 W
V
P
= 22 V; R
L
= 4
Ω
90
92
-
%
V
P
= 30 V; R
L
= 8
Ω
91
93
-
%
P
o(RMS)
RMS output power
continuous time output power per
channel
R
L
= 4
Ω
; V
P
= 22 V
THD+N = 0.5 %; f
i
= 1 kHz
10.9
12.1
-
W
THD+N = 0.5 %; f
i
= 100 Hz
-
12.1
-
W
THD+N = 10 %; f
i
= 1 kHz
13.8
15.3
-
W
THD+N = 10 %; f
i
= 100 Hz
-
15.3
-
W
R
L
= 8
Ω
; V
P
= 30 V
THD+N = 0.5 %; f
i
= 1 kHz
11.1
12.3
-
W
THD+N = 0.5 %; f
i
= 100 Hz
-
12.3
-
W
THD+N = 10 %; f
i
= 1 kHz
14.0
15.5
-
W
THD+N = 10 %; f
i
= 100 Hz
-
15.5
-
W
short time output power per channel
R
L
= 4
Ω
; V
P
= 29 V
THD+N = 0.5 %
19.0
21.1
-
W
THD+N = 10 %
23.8
26.5
-
W
Table 12.
SE characteristics (Continued)
V
P
= 22 V; R
L
= 2
×
4
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω
[1]
; T
amb
= 25
°
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 13.
BTL characteristics
V
P
= 22 V; R
L
= 8
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω
amb
= 25
°
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
THD+N
total harmonic
distortion-plus-noise
P
o
= 1 W
f
i
= 1 kHz
-
0.007
0.1
%
f
i
= 6 kHz
-
0.05
0.1
%
G
v(cl)
closed-loop voltage gain
35
36
37
dB
SVRR
supply voltage ripple rejection
Operating mode
f
i
= 100 Hz
-
75
-
dB
f
i
= 1000 Hz
70
75
-
dB
sleep; f
i
= 100 Hz
-
80
-
dB
|
Z
i
|
input impedance
differential
35
50
k
Ω