NXP Semiconductors TDA8932B, Лист данных продукта

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TDA8932B_3 © NXP B.V. 21 June 2007. All rights reserved.
Product data sheet Rev. 03— 21 June 2007 19 of 48
NXP Semiconductors
TDA8932B
Class-D audio amplifier
[1] Measured with respect to pin CGND.
[2] Measured with respect to pin V
SSD(HW)
.
13. Dynamic characteristics
T
act(th_fold)
thermal foldback activation
temperature 140 - 150
°
C
Oscillator reference; pin OSCIO
[2]
V
IH
HIGH-level input voltage 4.0 - 5 V
V
IL
LOW-level input voltage 0 - 0.8 V
V
OH
HIGH-level output voltage 4.0 - 5 V
V
OL
LOW-level output voltage 0 - 0.8 V
N
slave(max)
maximum number of slaves driven by one master 12 - - -
Table 10. Static characteristics (Continued)
V
P
= 22 V; f
osc
= 320 kHz; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 11. Switching characteristics
V
P
= 22 V; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Internal oscillator
f
osc
oscillator frequency Rosc = 39 k
Ω
- 320 - kHz
range 300 - 500 kHz
Timing PWM output: pins OUT1 and OUT2
t
r
rise time I
O
= 0 A - 10 - ns
t
f
fall time I
O
= 0 A - 10 - ns
t
w(min)
minimum pulse width I
O
= 0 A - 80 - ns
Table 12. SE characteristics
V
P
= 22 V; R
L
= 2
×
4
Ω
; f
i
= 1 kHz; f
osc
= 320 kHz; R
s
< 0.1
Ω
[1]
; T
amb
= 25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
THD+N total harmonic
distortion-plus-noise P
o
= 1 W
[2]
f
i
= 1 kHz - 0.015 0.05 %
f
i
= 6 kHz - 0.08 0.10 %
G
v(cl)
closed-loop voltage gain V
i
= 100 mV; no load 29 30 31 dB
|∆
G
v
|
voltage gain difference - 0.5 1 dB
α
cs
channel separation P
o
= 1 W; f
i
= 1 kHz 70 80 - dB
SVRR supply voltage ripple rejection Operating mode
[3]
f
i
= 100 Hz - 60 - dB
f
i
= 1 kHz 40 50 - dB
|
Z
i
|
input impedance differential 70 100 - k
Ω
V
n(o)
noise output voltage Operating mode; R
s
= 0
Ω
[4]
- 100 150
µ
V
Mute mode
[4]
- 70 100
µ
V
V
O(mute)
mute output voltage Mute mode; V
i
= 1 V (RMS) and
f
i
= 1 kHz
- 100 -
µ
V