NXP Semiconductors BGD885, Техническое описание

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2001 Nov 02 4
NXP Semiconductors Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
Fig.2 Test circuit.
1
2 3 4 5 6 7 8 9
BGD885
input
C2
output
VB = 24 V
MEA094-2
10 V
C1
List of components (see Fig.2)
COMPONENT DESCRIPTION VALUE
C1 ceramic multilayer capacitor 1 nF (max.)
C2 ceramic multilayer capacitor 1 nF
R resistor 56

2 W