NXP Semiconductors BGD885, Техническое описание

Страница: 3 / 8

2001 Nov 02 3
NXP Semiconductors Product specification
860 MHz, 17 dB gain power doubler
amplifier
BGD885
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
B
= 24 V; T
mb
= 35

C; Z
S
= Z
L
= 75

Notes
1. Decrease per octave of 1.5 dB.
2. V
p
= 59 dBmV at f
p
= 349.25 MHz;
V
q
= 59 dBmV at f
q
= 403.25 MHz;
measured at f
p
+ f
q
= 752.5 MHz.
3. Measured according to DIN45004B:
f
p
= 341.25 MHz; V
p
= V
o
;
f
q
= 348.25 MHz; V
q
= V
o

6 dB;
f
r
= 350.25 MHz; V
r
= V
o

6 dB;
measured at f
p
+ f
q

f
r
= 339.25 MHz.
4. Measured according to DIN45004B:
f
p
= 851.25 MHz; V
p
= V
o
;
f
q
= 858.25 MHz; V
q
= V
o

6 dB;
f
r
= 860.25 MHz; V
r
= V
o

6 dB;
measured at f
p
+ f
q

f
r
= 849.25 MHz.
5. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 16.5 17.5 dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB
FL flatness of frequency response f = 40 to 860 MHz
 
0.5 dB
S
11
input return losses f = 40 MHz; note 1 20

dB
f = 800 to 860 MHz 10

dB
S
22
output return losses f = 40 MHz; note 1 20

dB
f = 800 to 860 MHz 10

dB
d
2
second order distortion note 2
 
53 dB
V
o
output voltage d
im
=

60 dB; note 3 64

dBmV
d
im
=

60 dB; note 4 63

dBmV
F noise figure f = 50 MHz

8 dB
f = 550 MHz

8 dB
f = 650 MHz

8 dB
f = 750 MHz

8 dB
f = 860 MHz

8 dB
I
tot
total current consumption (DC) note 5

450 mA