NXP Semiconductors A3M36SL039I, Руководство пользователя

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Electrical characteristics
A3M36SL039 Airfast Power Amplifier Module with Autobias Control, Rev. 0, December 2021
Data Sheet: Technical Data 6 / 33
2.2.2 Functional tests
Table 7. Functional tests
Characteristic Symbol Min Typ Max Unit
Functional Tests — 3400 MHz 1 (In NXP Doherty Production ATE 2 Test Fixture, 50 ohm system) V
DD
= 29 Vdc, Nominal
DAC Settings, Tx_EN = High, P
out
= 8 W Avg., 1-tone CW, f = 3400 MHz.
Gain G 26.7 29.1 — dB
Drain Efficiency η
D
29.0 36.9 — %
P
out
@ 3 dB Compression Point P3dB 46.8 47.9 — dBm
Functional Tests — 3800 MHz 1 (In NXP Doherty Production ATE 2 Test Fixture, 50 ohm system) V
DD
= 29 Vdc, Nominal
DAC Settings, Tx_EN = High, P
out
= 8 W Avg., 1-tone CW, f = 3800 MHz.
Gain G 26.3 28.2 — dB
Drain Efficiency η
D
28.0 34.3 — %
P
out
@ 3 dB Compression Point P3dB 46.3 47.4 — dBm
2.2.3 Wideband ruggedness
Table 8. Wideband ruggedness
Characteristic Symbol Min Typ Max Unit
Wideband Ruggedness 3 (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) Nominal DAC
Settings, Tx_EN = High, f = 3600 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 30 Vdc, 3 dB Input Overdrive from 8 W
Avg. Modulated Output Power
No Device Degradation
2.2.4 Typical performance
Table 9. Typical performance
Characteristic Symbol Min Typ Max Unit
Typical Performance 3 (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) V
DD
= 29 Vdc, Nominal
DAC Settings, Tx_EN = High, P
out
= 8 W Avg., 3600 MHz
VBW Resonance Point, 2-tone, 1 MHz Tone Spacing
(IMD Third Order Intermodulation Inflection Point)
VBW
res
— 400 — MHz
1-carrier 20 MHz LTE, 8 dB Input Signal PAR
Gain G — 29.8 — dB
Power Added Efficiency PAE — 38.3 — %
Adjacent Channel Power Ratio ACPR — –30.9 — dBc
Adjacent Channel Power Ratio ALT1 — –39.4 — dBc
Adjacent Channel Power Ratio ALT2 — –49.1 — dBc
Gain Flatness 4 G
F
— 0.5 — dB
Fast CW, 27 ms Sweep
P
out
@ 3 dB Compression Point P3dB — 47.8 — dBm
AM/PM @ P3dB
Φ
— –18 —
°
Gain Variation @ Avg. Power over Temperature
(–40
°
C to +105
°
C)
ΔG — 0.036 — dB/
°
C
P3dB Variation over Temperature
(–40
°
C to +105
°
C)
P3dB — 0.008 — dB/
°
C
1. Part input and output matched to 50 ohms.
2. ATE is a socketed test environment.
3. All data measured in fixture with device soldered in NXP reference circuit.
4. Gain flatness = Max(G(f
Low
to f
High
)) – Min(G(f
Low
to f
High
))