NXP reserves the right to change the detail specifications as may be required to permit improvements
in the design of its products.
The A3M36SL039 is a fully integrated Doherty power amplifier module
designed for wireless infrastructure applications that demand high
performance in the smallest footprint. Ideal for applications in massive MIMO
systems, outdoor small cells and low power remote radio heads. The field-
proven LDMOS power amplifiers are designed for TDD and FDD LTE
systems. The module integrates an autobias feature with the option to
overwrite production settings. Autobias automatically sets and regulates
transistor bias over temperature upon power up. An integrated sensor for
monitoring temperature is also present. Communications to the module can
be accomplished via either I
2
C or SPI.
3400–3800 MHz
Typical LTE Performance: P
out
= 8 W Avg., V
DD
= 29 Vdc, 1 × 20 MHz LTE,
Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.
1
Carrier Center
Frequency
Gain
(dB)
ACPR
(dBc)
PAE
(%)
3410 MHz
29.5
–28.6
36.7
3600 MHz
29.8
–30.9
38.3
3790 MHz
29.4
–29.1
36.4
1. All data measured with device soldered in NXP reference circuit.
Features
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• Autobias on power up
• Temperature sensing
• Digital interface (I
2
C or SPI)
• Embedded registers and DACs for setting bias conditions
• Tx Enable control pin for TDD operation
A3M36SL039I
A3M36SL039S
3400–3800 MHz, 29 dB,
8 W Avg. Airfast Power
Amplifier Module with
Autobias Control
10 mm × 8 mm Module
A3M36SL039
Airfast Power Amplifier Module with Autobias Control
Rev. 0 — December 2021
Data Sheet: Technical Data
