3. TECHNICAL BRIEF
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3.5.3 UMTS Power Amplifier (U1002)
The WS2512TR1G meets the increasing demands for higher output power in UMTS handsets. The PA
module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250
chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-
the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency
for different output power levels, and a shutdown mode with low leakage current, increase handset talk
and standby time. The self-contained 4 mm x 4 mm x 1.1 mm surface mount package incorporates
matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Figure.3.5.3-1 UMTS PA functional block diagram
Содержание U310
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Страница 33: ...3 TECHNICAL BRIEF 34 Figure 3 5 10 1 Bluetooth system architecture ...
Страница 47: ...3 TECHNICAL BRIEF 48 Figure PM6650 2M Functional Block Diagram ...
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Страница 110: ...4 TROUBLE SHOOTING 111 CN501 C537 C538 MSM6250A ...
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Страница 160: ...9 Calibration RF Auto Test Program 161 9 3 1 Example for Calibration Click START U310 ...
Страница 161: ...9 Calibration RF Auto Test Program 162 9 3 2 Example for RF Auto Test Click Run button U310 U310 U310 U310 ...
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