THE SYMBOL MARK OF THIS SCHEMETIC DIAGRAM INCORPORATES
SPECIAL FEATURES IMPORTANT FOR PROTECTION FROM X-RADIATION.
FIRE AND ELECTRICAL SHOCK HAZARDS, WHEN SERVICING IF IS
ESSENTIAL THAT ONLY MANUFACTURES SPECIFIED PARTS BE USED FOR
THE CRITICAL COMPONENTS IN THE SYMBOL MARK OF THE SCHEMETIC.
AC_DET
R675
1
IC608
AP1117E33G-13
OUT
IN
ADJ/GND
P_17V
R662
1
+3.3V
C606
0.1uF
16V
+5V
5V_ON
+3.3V_ST
C607
0.1uF
16V
P600
SMAW200-H18S1
14
9
4
18
13
8
3
17
12
7
2
16
11
6
1
15
10
5
19
R600
10K
C616
10uF
10V
C610
0.1uF
16V
RL_ON
+5V_ST
C608
10uF
10V
R609
100
VS_DET
VS_ON
L606
120-ohm
2A
+3.3V_ST
R624
15K
READY
17V_DET
R601
10K
READY
R606 4.7K
C611
10uF
10V
IC605
AP1117E33G-13
OUT
IN
ADJ/GND
+5V
R608
1
+3.3V_DDR
R639
10K
R604
4.7K
C633
1000pF
50V
L600
120OHM
R692
3.6K
LNB
LNB_CTL
C701
0.01uF
50V
LNB
R1
6.8K
1%
LNB
D6000
40V
SMAB34
LNB
L617
BLM18PG121SN1D
LNB
IC614
TPS54231D
LNB
3
EN
2
VIN
4
SS
1
BOOT
5
VSENSE
6
COMP
7
GND
8
PH
C707
15pF
50V
LNB
P_17V
R610
51K
LNB
L608
22.0uH
LNB
EAP61606601
C702
0.01uF
50V
LNB
R681
16K
READY
R686
1.6K
1%
LNB
R685
120K
1%
LNB
+12V_LNB
C703
0.1uF
50V
LNB
C704
470pF
50V
LNB
C612
0.1uF
16V
F_NIM
+1.2V_TU
R615
1
F_NIM
+3.3V_TU
C605
1uF
25V
F_NIM
+3.3V_DDR
L618
120-ohm
2A
L604
120-ohm
2A
+1.5V_DDR
D600
5V
READY
R602
6.8K
1/16W
1%
D601
2.5V
READY
+3.3V_TU
R603
1.2K
1/16W
1%
C700
10uF
25V
LNB
C705
10uF
25V
LNB
C706
10uF
25V
LNB
R613
11K
1%
F_NIM
R614
20K
1%
F_NIM
+5V_ST
D602
5V
L602
120
+3.3V_ST
C601
0.1uF
16V
C600
1uF
25V
R617
10K
1%
R619
1
IC603
AP7361-Y-13
3
ADJ/NC
2
GND
4
IN
1
EN
5
OUT
IC601
AP7361-Y-13
F_NIM
3
ADJ/NC
2
GND
4
IN
1
EN
5
OUT
IC1203
AZ1117EH-ADJTRG1
ADJ/GND
OUT
IN
R671
10K
READY
R659
10K
R664
10K
1
/
1
6
W
5
%
Q603
MMBT3904(NXP)
E
B
C
+5V_ST
RL_ON
+5V
C708
0.1uF
16V
R657
10K
READY
C709
0.1uF
16V
READY
Q604
DMP2130L
Diode_FET
G
D
S
R618
1.6K
1%
R620
1.6K
1%
C620
0.01uF
50V
C621
10uF
10V
C603
2.2uF
10V
READY
C627
10uF
10V
C618
10uF
10V
C617
10uF
10V
C619
10uF
10V
C602
10uF
10V
C614
10uF
10V
F_NIM
R612
3.3K
F_NIM
R616
3.3K
Q604-*1
AO3435
AOS_FET
G
D
S
R683
1K
Power
L14
6
2013-08-06
<Power Wafer>
--> +1.5V_DDR
+5V_ST --> 3.3Vst
+5V->+3.3V
->+3.3V_TU
5V_ST --> MULTI 5V
10
Current Limit : 1.1A
+5V->+3.3V_DDR
POWER
<ST-BY>
<MUTI>
2A
Vout=0.8*(1+R1/R2)
R1
Max 1.3A
17V->+12V LNB
*NOTE 13
-->3.12V
R2
R1
R2
Vo=0.8*(1+R1/R2)
--> +1.2V_TU
Current Limit : 1.1A
Current Limit : 1.1A
R2
Vo=0.8*(1+R1/R2)
R1
3A
Copyright
©
2014 LG Electronics Inc. All rights reserved.
Only for training and service purposes
LGE Internal Use Only
Содержание 60PB5600
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