S530 Parametric Test System Test Subroutine Library User's Manual
Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015
3-17
Details
This subroutine sweeps the collector-emitter voltage from
vcemin
to
vcemax
while monitoring the
collector current with the base shorted to the emitter. When the programmed current level (
ipgm
) is
reached, the last collector-emitter voltage increment is returned as
bvces1
.
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
Set the
udelay
parameter to approximate
C
*
vcemax
/
ipgm
, where
C
= Junction capacitance of
the device under test.
V/I polarities
The polarities of
vcemin
,
vcemax
, and
ipgm
are determined by device type.
Source-measure units (SMUs)
SMU1: Forces V
CE
, programmed current limit = 1.25 *
ipgm
, measures I
CEO
Example
result = bvces1(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type);
Schematic
bvdss
This subroutine measure drain-source breakdown voltage (V
G
= 0) when the gate is grounded with the source.
Usage
double bvdss(int
d
, int
g
, int
s
, int
sub
, double
ipgm
, double
vlim
);
d
Input
The drain pin of the device
g
Input
The gate pin of the device
s
Input
The source pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced drain current, in amperes
vlim
Input
The drain voltage limit, in volts
Returns
Output
Measured breakdown voltage:
+2.0E + 21
= Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (
vlim
)
