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RAS Precharge Time
If an insufficient number of cycles is allowed for the RAS to accumulate its charge before
DRAM refresh, the refresh may be incomplete and the DRAM may fail to retain date.
Fast
gives faster performance; and
Slow
gives more stable performance. This field applies only
when synchronous DRAM is installed in the system. The settings are: Auto, 2 and 3.
Activate To Command Delay
This field let’s you insert a timing delay between the CAS and RAS strobe signals, used when
DRAM is written to, read from, or refreshed.
Fast
gives faster performance; and
Slow
gives
more stable performance. This field applies only when synchronous DRAM is installed in the
system. The settings are: Auto, 2T and 3T.
RAS Active Time
Select the number of SCLKs for an access cycle. The settings are: Auto, 5T and 6T.
CAS Latency
When synchronous DRAM is installed, the number of clock cycles of CAS latency depends
on the DRAM timing. The settings are: 2 and 3.
DRAM Drive Control
This field let’s you choose the Memory Address, Memory Data drive current to suit your
SDRAM Module, the Default setting is Auto.
3-6-2 AGP Function Settings
CMOS Setup Utility – Copyright(C) 1984-2000 Award Software
AGP Function Settings
Item Help
AGP Rate Auto
AGP Aperture Size 64M
AGP Driving Control Auto
AGP Driving Value DA
AGP Fast Write Disabled
AGP Master 1 WS Write Enabled
AGP Master 1 WS Read Enabled
Menu Level >>
↑↓→←
Move Enter:Select Item +/-/PU/PD:Value F10:Save ESC:Exit F1:General Help
F5:Previous Values F6:Optimized Defaults F7:Standard Defaults
Note: Change these settings only if you are familiar with the chipset.
