Intel 82555, Техническое описание

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Datasheet 43
Networking Silicon — 82555
11.0 Electrical Specifications and Timing Parameters
11.1 Absolute Maximum Ratings
11.2 General Operating Conditions
11.3 DC Characteristics
11.3.1 MII DC Characteristics
11.3.2 10BASE-T Voltage/Current DC Characteristics
Symbol Parameter Description Min Typ Max Units
T
C
Case temperature under bias 0 85 C
T
S
Storage temperature -65 140 C
V
SUP
Supply voltage -0.5 7.0 V
V
OA
a
a. Stresses above the listed under absolute maximum ratings may cause permanent damage to the
device. This is a stress rating only and functional operations of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Ex-
posure to absolute maximum rating conditions for extended periods may affect device reliability.
All output voltages -0.5 7.0 V
V
OTD
Transmit Data Output Voltage -0.5 8.0 V
V
IA
All input voltages -1.0 6.0 V
Symbol Parameter Description Min Typ Max Units
V
CC
Supply voltage 4.75 5.25 V
T
C
Case temperature 0 85 C
Symbol Parameter Description Condition Min Typ Max Units
V
IL
Input low voltage (TTL) 0 0.8 V
V
IH
Input high voltage (TTL) 2.0 V
V
OL
Output low voltage I
out
= 4 mA 0.45 V
V
OH
Output high voltage I
out
= -4 mA 2.4 V
I
IL
Input low leakage current 0 < V
in
< V
CC
±15
µ
A
C
IN
a
a. This parameter is only characterized, not tested. It is valid for digital pins only.
Input capacitance 10 pF
Symbol Parameter Description Condition Min Typ Max Units
R
ID10
a
Input differential resistance
DC and V
RDP
=
(V
CC
/2) + 0.5 V
10 K
Ω