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Data Sheet
165
Rev. 1.00
2017-07-31
TLE9262BQXV33
Application Information
17
Application Information
17.1
Application Diagram
Note:
The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.
Figure 59 Simplified Application Diagram
C
1
R
13
C
15
VSHS
LIN1
S
1
VBAT
C
11
R
10
CANH
C
12
R
11
CANL
R
2
V
SS
V
DD
CSN
CLK
SDI
SDO
µC
INT
CSN
CLK
SDO
SDI
FOx
VCC1
C
4
V
CC1
C
5
WK1
HS1
VS
Reset
INT
RO
VCAN
GND
Q1
V
CC
GND
IC1
V
S
LOGIC
State
Machine
Application _information
_TLE9262 .vsd
V
S
T1
CANH
CANL
CAN cell
VBAT
VBAT
VS
TLE9262
V
S
VCC3REF
Q2
LIN1
LIN cell
HS2
HS3
VSHS
HS4
LH
V
CC2
WK3
WK2
R
1
R
4
S
3
R
6
R
5
R
3
Hall1
Hall2
Q1
Q2
Q1
Q2
D
1
C
7
R
8
D
3
Other loads , e.g.
sensor , opamp, ...
C
8
R
7
D
4
TxD CAN
RxD CAN
TxD CAN
RxD CAN
TxD LIN1
RxD LIN1
TxD LIN1
RxD LIN1
VCC2
VSHS
VSHS
VSHS
VSHS
D
2
C
2
C
3
Note: The external capacitance on FO3/TEST must be
<=10nF in oder to ensure proper detection of SBC
Development Mode und SBC user mode operation
T
2
C
13
R
12
V
CC3
VCC3B
VCC3SH
C
14
C
9
C
10
C
6
V
CC2
D
5
R
9
C
17
C
18
S
2