IEPC EPC9048C Скачать руководство пользователя страница 4

QUICK START GUIDE

EPC9048C

EPC – THE LEADER IN GaN TECHNOLOGY   |   

WWW.EPC-CO.COM

   |   COPYRIGHT 2019   |                                                                                                                          |   4

THERMAL CONSIDERATIONS

The EPC9048C development board showcases the EPC2034C eGaN FET. 
The EPC9048C is intended for bench evaluation with typical room ambient 
temperature. The addition of heat-sinking and forced air cooling can 
significantly increase the current capability of these devices, but care must 
be taken to not exceed the absolute maximum die temperature of 150° C.  

NOTE

. The EPC9048C development board does not have any current or thermal 

protection on board. 
For more information regarding the thermal performance of EPC eGaN FETs, please 

consult:
D. Reusch and J. Glaser, 

DC-DC Converter Handbook

, a supplement to 

GaN Transistors for 

Efficient Power Conversion

, First Edition, Power Conversion Publications, 2015.

Table 2: Bill of Materials

Item

Qty

Reference

Part Description

Manufacturer

Part #

1

5

C1, C2, C3, C10, C11

Capacitor, 1 μF, 10%, 25 V, X5R

Murata

GRM188R61E105KA12D

2

1

C6

Capacitor, 100 pF, 5%, 50 V

TDK

C1608C0G1H101J080AA

3

4

C8, C9, C12, C13

Capacitor, 0.22 μF, 10%, 16 V, X7R

TDK

C1005X7R1C224K050BC

4

4

C16, C17, C18, C19

Capacitor, 0.1 μF, 10%, 250 V, X7T

TDK

C2012X7T2E104K125AE

5

1

C41

Capacitor, 10 pF, 5%, 50 V

Kemet

C0402C100J5GACTU

6

1

C42

Capacitor, 100 pF, 5%, 50 V

TDK

C1005C0G1H101J050BA

7

10

"C60, C61, C62, C63,C64,C65, 

 C66, C67, C68, C69"

Capacitor, 0.22 μF, 10%, 250 V, X7T

TDK

C3216X7T2E224K160AA

8

2

D1, D2

Schottky Diode, 30 V, 30 mA

Diodes Inc.

SDM03U40-7

9

1

D3

Schottky Diode, 200 V, 1 A

Diodes Inc.

DFLS1200

10

2

R12, R14

Resistor, 4.7 Ω, 1%, 1/16 W

Stackpole

RMCF0402FT4R70

11

2

D6, D7

Zener Diode, 5.61 V, 500 mW

On Semiconductor

MM5Z5V6ST1G

12

1

GP1

Connector, .1" Male Vert.

Würth

61300111121

13

2

J1, SWP1

Connector, .1" Male Vert.

Würth

61300211121

14

1

J2

Connector, .1" Male Vert.

Tyco

4 pins of 4-103185-0-04

15

1

"J3, J4, J5, 

 J6, J7, J8"

Connector, .1" Male Vert.

FCI

4 pins of 68602-224HLF

16

2

Q1, Q2

eGaN® FET, 200 V, 8 mΩ

EPC

EPC2034C

17

1

R1

Resistor, 10.0 kΩ, 1%, 1/10 W

Stackpole

RMCF0603FT10K0

18

2

R2, R3

Resistor, 0 Ω, 1/10 W

Panasonic

ERJ-3GEY0R00V

19

1

R4

Resistor, 100 Ω, 1%, 1/10 W

Stackpole

RMCF0603FT100R

20

1

R5

Resistor, 470 Ω, 1%, 1/10 W

Stackpole

RMCF0603FT470R

21

1

R6

Resistor, 0 Ω, 1/10 W

Panasonic

ERJ-2GE0R00X

22

2

R11, R12

Resistor, 1 Ω, 1%, 1/16 W

Stackpole

RMCF0402FT1R00

23

2

TP1, TP2

Test Point

Keystone

5015

24

1

U1

IC, Logic

Fairchild

NC7SZ00L6X

25

1

U2

IC, Opto-coupler

Silicon Labs

Si8610BC

26

1

U4

IC, Logic

Fairchild

NC7SZ08L6X

27

2

U6, U7

IC, Gate driver

TI

UCC27611

Table 2: Bill of Materials

Item

Qty

Reference

Part Description

1

DNP

P1, P2

Optional potentiometer

2

DNP

R21, R22

Optional resistor

3

DNP

U5

Optional IC

Содержание EPC9048C

Страница 1: ...Development Board EPC9048C Quick Start Guide 200VHalf bridgewithGateDrive UsingEPC2034C Revision 2 0 ...

Страница 2: ... off connect the gate drive power supply to VDD J1 Pin 1 and ground return to VDD J1 Pin 2 4 With power off connect the input PWM control signal to PWM J2 Pin 1 and ground return to any of the remaining J2 ground pins J2 Pin 2 or J2 Pin 4 5 Turn on the gate drive supply make sure the supply is between 7 5V and 12V range 6 Turn on the controller PWM input source 7 Turn on the bus voltage to the req...

Страница 3: ...m of EPC9048C development board VGSL VSW IL VDD Q1 DBTST Q2 PWM GND Gate drive regulator Digital Isolator Logic and dead time adjust VIN VSW CBypass PGND Digital Isolator Gate driver with LDO Gate driver with LDO VDD supply note polarity 7 5 12 V Half bridge configuration Switch node For efficiency measurement V V A IN IIN PWM input Optional MMCX jacks for gate drive measurement External circuit O...

Страница 4: ... V Kemet C0402C100J5GACTU 6 1 C42 Capacitor 100 pF 5 50 V TDK C1005C0G1H101J050BA 7 10 C60 C61 C62 C63 C64 C65 C66 C67 C68 C69 Capacitor 0 22 μF 10 250 V X7T TDK C3216X7T2E224K160AA 8 2 D1 D2 Schottky Diode 30 V 30 mA Diodes Inc SDM03U40 7 9 1 D3 Schottky Diode 200 V 1 A Diodes Inc DFLS1200 10 2 R12 R14 Resistor 4 7 Ω 1 1 16 W Stackpole RMCF0402FT4R70 11 2 D6 D7 Zener Diode 5 61 V 500 mW On Semico...

Страница 5: ...oltage Gate Net Class V 2 5 1 2 5 1 0 22 μF V 0 22 μF V 1 μF 25 V 0 1 μF 250 V 0 1 μF 250 V 0 1 μF 250 V 12 1 Ω 11 1 Ω Local Fiducials 1 Ground Post 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 0 22 μF 250 V 10 V 100 0 Ω V 1 2 3 4 1 2 1 2 Switch Node SIP Probe V 21 22 2 21 1 0 Ω 2 22 1 MMCX Gate Probes V 0 1 μF 250 V ...

Страница 6: ...y itispossiblethatboardsmaycontaincomponentsorassemblymaterialsthatarenotRoHScompliant EfficientPowerConversionCorpora tion EPC makesnoguaranteethatthepurchasedboardis100 RoHScompliant TheEvaluationboard orkit isfordemonstrationpurposesonlyandneithertheBoardnorthisQuickStartGuideconstituteasalescontractorcreateanykindofwarranty whetherexpress orimplied astotheapplicationsorproductsinvolved Disclai...

Отзывы: