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Common specifications
Type
20mm pitch type
Model No.
SE4D-H
Detecting capability
(Min. sensing object)
ø25mm opaque object
Effective aperture
angle (EAA)
±2.5 degree or less
[for sensing range exceeding 3m(Required by IEC 61496-2, ANSI/UL 61496-2)]
Supply voltage
24V DC ±10% Ripple P-P 10% or less
Control output
(OSSD 1 / 2)
PNP open-collector transistor / NPN open-collector transistor (switching type)
<For PNP output>
•
Maximum source current: 200mA
•
Applied voltage: same as supply voltage
(between the control output and +V)
•
Residual voltage: 2.5V or less
(source current 200mA, when using 15m length cable)
•
Leakage current: 0.1mA or less
(power supply OFF condi ion)
•
Maximum load capacity: 0.22µF
(No load to maximum output current)
•
Load wiring resistance: 3Ω or less
<For NPN output>
•
Maximum sink current: 200mA
•
Applied voltage: same as supply voltage
(between he control output and 0V)
•
Residual voltage: 2.5V or less
(sink current 200mA, when using 15m length cable)
•
Leakage current: 0.1mA or less
(power supply OFF condi ion)
•
Maximum load capacity: 0.22µF
(No load to maximum output current)
•
Load wiring resistance: 3Ω or less
Opera ion mode
(Output opera ion)
ON when all beams are received, OFF when one or more beams are interrupted (Note 1, 2)
(OFF when fault occurs in the sensor or the synchronization signal error, too)
Protection circuit
(Short-circuit protection)
Incorporated
Response time
(In normal operation)
OFF response: 14ms or less, ON response: 80 to 90ms
Auxiliary output
(Non-safety output)
PNP open-collector transistor / NPN open-collector transistor (switching type)
<For PNP output>
•
Maximum source current: 100mA
•
Applied voltage: same as supply voltage
(between the auxiliary output and +V)
•
Residual voltage: 2.5V or less
(source current 100mA, when using 15m length cable)
<For NPN output>
•
Maximum sink current: 100mA
•
Applied voltage: same as supply voltage
(between the auxiliary output and 0V)
•
Residual voltage: 2.5V or less
(sink current 100mA, when using 15m length cable)
Opera ion mode
(Output opera ion)
When OSSDs are ON: OFF, when OSSDs are OFF: ON (factory setting)
[Changeable by using the handy controller
SE9Z-HC
(optional).]
Protection circuit
(Short-circuit protection)
Incorporated
Protection
IP65, IP67 (IEC60529)
Degree of pollution
3
Ambient temperature
-10 to +55°C (No dew condensation or icing allowed), Storage: -25 to +70°C
Ambient humidity
30 to 85% RH, Storage: 30 to 95% RH
Ambient illuminance
Incandescent lamp: 3,500ℓ
x or less at the light-receiving surface
Operating altitude
2,000m or less
Voltage withstandability 1,000V AC for one min. (between all supply terminals connected together and enclosure)
Insulation resistance
20MΩ or more with 500V DC mega
(between all supply terminals connected together and enclosure)
Vibration resistance
10 to 55Hz frequency, 0.75mm amplitude in X, Y and Z directions for two hours each
Shock resistance
300m/s
2
acceleration (approx. 30G) in X, Y and Z directions for three times each
SFF (Safe failure fraction)
99%
HFT (Hardware fault tolerance)
1
Subsystem·Type
Type B (IEC 61508-2)
Mission time
20 years
Accessory
SE9Z-SED-2
(Intermediate supporting bracket): (Note 3)
SE9Z-TR25
(Test rod): 1
Notes: 1) The beam channel is not turned OFF during muting even if it is blocked.
2) In case the blanking function is valid, the operation mode is changed.
3)
The intermediate supporting bracket (
SE9Z-SED-2
) is enclosed with the following devices. The quantity
of the enclosed bracket differs depending on the device as follows:
1 set: 40 to 56 beam channels
2 sets: 64 to 80 beam channels
3 sets: 88 to 96 beam channels