46
∗
h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
B
E
C
( 7 0
Ω
)
I
C
– V
C E
Characteristics (Typical)
h
F E
– I
C
Characteristics (Typical)
h
F E
– I
C
Temperature
Characteristics (Typical)
I
C
– V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) – I
B
Characteristics (Typical)
P c – T a Derating
0
0
– 2
– 4
– 6
– 8
– 2
– 4
– 6
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
–10mA
–2.5mA
– 2 .
0 m
A
– 1 . 8 m
A
– 1 . 5 m
A
– 1 . 3 m A
– 1 . 0 m A
– 0 . 8 m A
– 0 . 5 m A
I
B
= – 0 . 3 m A
0
– 3
– 2
– 1
– 0 . 2
–1
–0.5
–10
–5
–200
–100
–50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
– 6 A
– 8 A
I
C
= – 4 A
0
– 8
– 6
– 2
– 4
0
– 3
– 2
– 1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= – 4 V )
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
– 0 . 2
– 1
– 0 . 5
– 8
– 5
2,000
5,000
10,000
40,000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= – 4 V )
T y p
( V
C E
= – 4 V )
– 0 . 2
– 1
– 5
– 0 . 5
– 8
C o l l e c t o r C u r r e n t I
C
( A )
1000
5000
10000
50000
DC Current Gain h
FE
1 2 5 ˚ C
2 5 ˚ C
– 3 0 ˚ C
0 . 2
0 . 5
4
1
1
1 0
5 0
5
1 0 0
5 0 0 1 0 0 0 2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
θ
j-a
(˚C/W)
0 . 0 2
0 . 1
0 . 0 5
0 . 5
1
5
8
0
4 0
6 0
2 0
1 0 0
8 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= – 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
– 1 0
– 5 0
– 5
– 2
– 1 0 0
– 2 0 0
– 0 . 0 5
– 1
– 0 . 5
– 0 . 1
– 1 0
– 2 0
– 5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
8 0
6 0
4 0
2 0
3 . 5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( ˚ C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
Safe Operating Area (Single Pulse)
θ
j - a
– t
Characteristics
f
T
– I
E
Characteristics (Typical)
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2389)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1559
–160
–150
–5
–8
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1559
–100
max
–100
max
–150
min
5000
min
∗
–2.5
max
–3.0
max
65
typ
160
typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB
=–160V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–6A
I
C
=–6A, I
B
=–6mA
I
C
=–6A, I
B
=–6mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
Darlington
2SB1559
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
■
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(
Ω
)
10
I
C
(A)
–6
V
BB2
(V)
5
I
B2
(mA)
6
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
3.6typ
t
f
(
µ
s)
0.9typ
I
B1
(mA)
–6
V
BB1
(V)
–10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
Equivalent circuit
harman/kardon
AVR 160/230 Service Manual
41 of 116
Содержание AVR 160/230
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