Section 1. Specifications:
Photodetector
Operating Wavelength
1550 ± 50nm
Photodetector Type
InGaAs
PD Responsivity
2
> 0.8mA / mW at 1550nm
PDL <0.2
dB
Return Loss
>45 dB
Maximum Input Power
10 mW
RF and Monitor Outputs
RF Output Bandwidth (3dB)
≥
400 MHz
Coupling AC
Lower cut-off frequency
<1 MHz
Transimpedance Gain at 50
Ω
>18
×
10
3
mV/mA
Conversion Gain at 50
Ω
>14
×
10
3
mV/mW (1550nm)
CW Balanced Saturation Power
>120
μ
W at 1550nm
Common Mode Rejection Ratio
>25 dB (DC to 400MHz)
NEP (10 - 100MHz)
<6 pW /
Hz
Bandpass Ripple (150-400 MHz)
±2dB max.
RF Output Impedance
50
Ω
RF Output Voltage Linear Range
>
−
1V to 1V at 50
Ω
load
>
−
2V to 2V at high impedance load
RF Output Connector
SMA
Monitor Output Bandwidth
DC to1kHz
Monitor Output Impedance
200
Ω
Monitor Gain at High impedance
3
0.42
×
10
3
mV/mW
Monitor Voltage (high Z and DC input)
>4V
Monitor Output Connector
SMA
Power Supply
Power Supply Input Connectors
2 rows (6 pins/row) with 0.1” pitch
Power Supply
±
5V / 200 mA
PSRR (power supply rejection ratio, f < 1MHz,
differential referred to output,
Δ
VCC = 30mV P-P)
>30 dB
General
Pigtail Length
1 m
Fiber Type
SMF-28e or equivalent
Operating Temperature
0 to 50 °C (Target : 0~70 °C)
Storage Temperature
−
40 to 85 °C
Dimensions
2.21”(L)
×
1.81”(W)
×
0.65”(H)
Notes: Values are referenced without connectors.
1.
All specifications in this table are tested under 23± 5°C
2.
Includes the coupling loss of fiber to photodiode.
3.
If the output voltages for the monitor ports are equal, then the photocurrents
are equal.
Document #: GP-IN-BPD-002-OEM-11
Page 3 of 11