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GSWP050W-EVBPA 

GaN E-HEMT Wireless Power Transfer Evaluation Board 

User’s Guide 

_____________________________________________________________________________________________________________________ 

GSWP050W-EVBPA Rev 190304 

© 2019 GaN Systems Inc.    

www.gansystems.com                          3 

 

Please refer to the Evaluation Board/Kit Important Notice on page 22

 

 

Introduction to Magnetic Resonant Wireless Power Transfer 

Recent technological advances in power semiconductors are enabling Wireless Power Transfer 
(WPT) as a technically and commercially viable option for charging and powering equipment 
across a wide range of markets, applications, and power levels.  
Inductive charging has been in use for a number of years, however, it’s burdened with limitations 
that restrict it to low power applications with tightly controlled alignment between the transmitter 
and receiver.  
A more advantageous approach, magnetic resonant charging, addresses these shortcomings by 
using a high frequency oscillating magnetic field to transfer energy. The benefits that magnetic 
resonant charging offers include variable spacing between the transmitter and receiver, the ability 
to charge through materials such as a desk or an enclosure, one-to-many charging, ease of 
installation, suitability for high power levels, and fast charging. Table 1 provides a comparison 
between inductive charging and magnetic resonant charging. 
GaN E-HEMTS are a key enabler of magnetic resonant charging because their extremely fast 
switching speeds, on the order of a few nanoseconds, result in very low switching losses.  This 
allows them to operate efficiently at very high frequencies, such as the 6.78MHz that is commonly 
used for magnetic resonant charging.  

 

Table 1 

A comparison of Inductive charging and Magnetic Resonant charging 

Charging technology 

Inductive 

Magnetic Resonant 

Frequency range 

80-300kHz 

6.78MHz 

Max transfer range 

5mm 

50mm 

Multi-device  

No 

Yes, at different power levels 

Spatial Freedom 

Low 

High 

Power Range 

Low & limited 

30W max 

Broad & versatile 

50W to 20kW+ 

Efficiency 

Limited to 80% 

High: up to 95% 

 

A high-level block diagram of a resonant wireless power transfer system is shown in Figure 1. The 
transmit section is composed of a power amplifier, an impedance matching circuit and a transmit 
coil.  High frequency energy is transferred wirelessly  at 6.78MHz  to  the  receive circuit which is 
comprised of a receive coil, an impedance matching circuit and a rectifier.  
The GSWP050W-EVBPA evaluation board is designed to support and expedite the innovation of 
WPT systems by providing the Power Amplifier, the most challenging aspect of the system design.   

Содержание GSWP050W-EVBPA

Страница 1: ...____________________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 1 Please refer to the Evaluation Board Kit Important Notice on page 22 GSWP050W EVBPA 50W GaN E H...

Страница 2: ...all locally approved safety procedures when working around high voltage Never leave the board operating unattended After it is de energized always wait until all capacitors are discharged before touc...

Страница 3: ...o many charging ease of installation suitability for high power levels and fast charging Table 1 provides a comparison between inductive charging and magnetic resonant charging GaN E HEMTS are a key e...

Страница 4: ...EF2 power amplifier The GS61004Bs are used with the integrated high speed pSemi PE29102 gate driver in a push pull configuration The outputs of the PE29102 are capable of providing switching transitio...

Страница 5: ...TEK scope with current probe TCM0030A Fluke 87 multimeter for input current 50dB 100W attenuator as load Spectrum analyzer Power meter Thermal meter Evaluation Board Assembly Overview The evaluation b...

Страница 6: ..._____________________________________________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 6 Please refer to the Evaluation Board Kit Important Notice on page 22 F...

Страница 7: ...2019 GaN Systems Inc www gansystems com 7 Please refer to the Evaluation Board Kit Important Notice on page 22 Block Diagram The block diagram of the evaluation board is provided in Figures 5 through...

Страница 8: ..._______________________________________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 8 Please refer to the Evaluation Board Kit Important Notice on page 22 Figure...

Страница 9: ...is driven by a crystal oscillator Y8 at a frequency of 13 56MHz The two PE29102 gate drives are capable of 6V operation The PA can be configured to operate in a number of different modes which includ...

Страница 10: ...rcurrent device over temperature output RF overvoltage and Voltage Standing Wave Ratio VSWR protection The protection signals are combined by U133 a 3 inputs OR gate logic chip and will shut the drive...

Страница 11: ...tection signals go to a two channel comparator U68 and are combined with OR gate U70 into one overvoltage trigger OVP_TRIG The OVP and OCP go into a hard combine circuit D45 which a dual diode in one...

Страница 12: ...____________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 12 Please refer to the Evaluation Board Kit Important Notice on page 22 copper coin Figure 13 Copper coin...

Страница 13: ...tion bench setup and test results Evaluation Board Overview Kit Contents The GSWP050W EVBPA evaluation kit contains Power Amplifier evaluation board assembly PA heatplate PA EMC shield 2 pins DC cord...

Страница 14: ...test points are available on the top side of the board none are on the bottom side The test points locations are silkscreened on the PCB Table 4 Test point description Test point Description TP197 U90...

Страница 15: ...a guideline for proper hardware operation and configuration 1 First set the current limit to 0 3A for the 5VDC supply feeding JP35 2 Set the current limit to 1A for the HV DC supply feeding J32 at a...

Страница 16: ...mal conduction apply thermal grease to the PA heatsink interface before screwing the units together Enough thermal grease should be applied so that a small amount extrudes on all four sides as the scr...

Страница 17: ...erating point the PA can work under very ZVS wide impedance range with high efficiency The PA duty cycle is controlled by gate driver PE29102A For a detailed time delay design please refer to Figure 8...

Страница 18: ...y is that it has a lower 2nd harmonic when compared to other PA topologies This advantage results in a Class EF2 PA with much better EMI performance Figure 19 shows the spectrum of the PA at 50W outpu...

Страница 19: ...ackaging provides an extremely low thermal impedance for efficient heat transfer to the heatsink thereby drawing heat out of the device This GaN based design is able to operate over a wide ambient tem...

Страница 20: ..._____________________________________________________________________________________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 20 Please refer to the Evaluatio...

Страница 21: ..._______________________________________________________ GSWP050W EVBPA Rev 190304 2019 GaN Systems Inc www gansystems com 21 Please refer to the Evaluation Board Kit Important Notice on page 22 Techni...

Страница 22: ...e board kit may be returned within 30 days from the date of delivery for a full refund THE FOREGOING WARRANTY IS THE EXCLUSIVE WARRANTY MADE BY THE SELLER TO BUYER AND IS IN LIEU OF ALL OTHER WARRANTI...

Страница 23: ...onents are not designed authorized or warranted for use in lifesaving life sustaining military aircraft or space applications nor in products or systems where failure or malfunction may result in pers...

Страница 24: ...Mouser Electronics Authorized Distributor Click to View Pricing Inventory Delivery Lifecycle Information GaN Systems GSWP050W EVBPA...

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