GS66508T-EVBHB 650V
GaN E-HEMT Half Bridge Evaluation Board
User’s Guide
_____________________________________________________________________________________________________________________
GS66508T-EVBHB UG rev. 150917
© 2015 GaN Systems Inc.
www.gansystems.com 13
Please refer to the Evaluation Board/Kit Important Notice on page 21
Test results
Pulse test (V
DS
=400V, I
MAX
= 30A, T
ON
=2us, N=5, L=120uH)
Pulse test results show that the gate driver is stable for the entire operating range from 0-30A with no
oscillation and minimum drain voltage overshoot.
Figure 12 - Pulse Test waveforms (400V/30A)
The measured rise time for turn-on is 10ns and the fall time at 30A turn-off is 6ns. The miller voltage is
under good control with a peak value of 0.8V which is lower than gate threshold of 1.6V at a dv/dt =
40V/ns and the turn-off negative voltage is clamped by the diode with a peak negative spike of
approximately -2V.
