GS-EVB-HB-66508B-RN Technical Manual
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GS-EVB-HB-66508B-RN Rev. 210118 © 2021 GaN Systems Inc.
www.gansystems.com 14
Please refer to the Evaluation Board/Kit Important Notice on page 26
Quick Start procedure –Pulses test
Follow the instructions below to quickly get started with your evaluation of GaN E-HEMT. Equipment
and components you will need:
•
Four-channel oscilloscope with 500MHz bandwidth or higher
•
high bandwidth (500MHz or higher) passive probe
•
high bandwidth (500MHz) high voltage probe (>600V)
•
AC/DC current probe for inductor current measurement
•
12V DC power supply
•
Signal generator capable of creating testing pulses
•
High voltage power supply (0-400VDC) with current limit.
•
External power inductor (recommend toroid inductor 50-200uH)
1.
Check the position
E
(figure2) on daughter board GS-EVB-HB-66508B-RN.
2.
Install GS-EVB-HB-66508B-RN on the mother board. Press all the way down until you feel a click.
Connect probe between TP8(low side GaN gate) and TP3(low side GaN source) for gate voltage
measurement in the daughter board.
3.
Set up the mother board:
a.
Connect 12VDC bias supply to J1.
b.
Connect PWM input gate signal (0-5V) to J7. If it is generated from a signal generator ensure
the output mode is high-Z mode.
c.
Set J4 to OFF position and J7 to INT.
d.
Set High voltage (HV) DC supply voltage to 0V and ensure the output is OFF. Connect HV
supply to
CON2
and
CON6.
e.
Use HV probe between TP6 and TP5 for Vds measurement.
f.
Connect external inductor between
CON1
and
CON3
. Use current probe to measure inductor
current IL.
4.
Set up and check PWM gate signal:
a.
Turn-on 12VDC power.
b.
Check the 2 LEDs on the daughter board. They should be turned on indicating the isolated
9V is present.
c.
Set up signal generator to create the waveforms as shown in Figure 13. Use equation I
SW
=
(V
DS
*T
ON1
) / L to calculate the pulse width of the first pulse and ensure the Isw_max is
≤
40A at
400VDC.
d.
Set the operation mode to either single trigger or Burst mode with repetition period of 100ms.
e.
Turn on the PWM output and check on the oscilloscope to make sure the GaN gate drive
voltage waveform is present and matches the PWM input.
5.
Power-on:
a.
Turn on the output of the HV supply. Start with low voltage and slowly ramp the voltage up
until it reaches 400VDC. During the ramping period closely observe the the voltage and
current waveforms on the oscilloscope.
6.
Power-off:
