Gan Systems GS-EVB-HB-0650603B-HD, Техническое руководство

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GS-EVB-HB-0650603B-HD
Half Bridge Bipolar Drive Switch Board
Technical Manual
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GS-EVB-HB-0650603B-HD TM Rev. 210712 © 2021 GaN Systems Inc www.gansystems.com 5
Please refer to the Evaluation Board/Kit Important Notice on page # 16
1 Overview
1.1 Introduction
The Integrated Circuits Half Bridge Driver-Switch GS-EVB-HB-0650603B-HD is a demonstration board
containing two HEY1011-L12C GaN FET drivers and two 650V, 60A GaN FETs configured in a half bridge
configuration.
The datasheet for the HEY1011-L12C in this board can be found
here .
The GS-EVB-HB-0650603B-HD can be used to perform
double pulse tests , or to interface the half bridge to
an existing LC power section , both as shown below.
The isolated HEY1011-L12C driver does not require secondary side power or bootstrap components. Gate
drive power is supplied to secondary side from the primary side supply voltage V
DRV
. The amplitude of
the gate drive can be varied by varying V
DRV
between 7 V and 15 V.
1.2 Quick Start Guide
Figure 1: GS-EVB-HB-0650603B-HD Quick Start
1. Apply V
DRV
= 12V
2. Link pins EN_PU and EN (if not using external Enable control)
3. Apply input gate signals, with adequate dead time, to the IN_L and IN_H inputs.
4. Convenient test points a located on the test board as shown above. A suitable differential
oscilloscope should be used to monitor the high side gate signal from V
GH
to V
SW
.
V
DRV
IN_H IN_L
LINK
V
BUS
L
OUT
C
OUT
Optional external
decoupling