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AN-9111 

APPLICATION NOTE 

© 2015 Fairchild Semiconductor Corporation 

 

www.fairchildsemi.com 

Rev. 1.1  

•  6/26/15 

2 

1.  Introduction 

This  application  note  supports  the  Motion  SPM

®

  45  LV-

series.  It  should  be  used  in  conjunction  with  Motion  SPM 
45  LV  datasheets,  and  Motion  SPM  design  reference 

(RD-

408).

 

1.1.  Design Concept 

The  key  design  objective  of  the  SPM  45  LV  series  is  to 
provide  a  compact  and  reliable  inverter  solution  for  small 
power  motor  drive  applications.  Ongoing  efforts  have 
improved  the  performance,  quality,  and  power  rating  of 
SPM 45 LV series products. 

The MOSFETs in SPM 45 LV series are specially processed 
to reduce the amount of body-diode reverse recovery charge 
to  minimize  the  switching  loss  and  enable  fast  switching 
operations.  Softness  of  the  reverse-recovery  characteristics 
is  managed  through  advanced  MOSFET  design  with 
optimized 

gate 

resistor 

selections 

to 

contain 

Electromagnetic  Interference  (EMI)  noise  within  a 
reasonable range. 

SPM  45  LV  series  has  six  fast-recovery  MOSFETs 
(FRFET

®

), LVIC and three-in-one HVIC. An FRFET-based 

power module has much better ruggedness and a larger Safe 
Operation  Area  (SOA)  than  MOSFET-based  module  or 
Silicon-On-Insulator modules. 

The  FRFET-based  power  module  has  a  big  advantage  in 
light-load  efficiency  because  the  voltage  drop  across  the 
transistor  decreases  linearly  as  current  decrease.  Some 
applications  require  continuous  operation  at  light  load 
except  short  transients  and  improving  the  efficiency  in  the 
light-load  condition  is  the  key  to  saving  energy. 
Refrigerators,  water  circulation  pumps,  and  some  fans  are 
good examples. 

Motion SPM 45 LV series achieves reduced board size and 
improved reliability compared to existing discrete solutions. 
Target  applications  are  invert  motor  drives  for  industrial 
use, such as general-purpose inverters, power tool and servo 
motors.  

 

 

1.2.  Key Features 

 

UL Certified No.E209204 (UL1557)   

 

40 V,  Low  R

DS(ON)

  3-Phase  MOSFET  Inverter 

Module with Gate Drivers and Protection 

 

Low Thermal Resistance Using Ceramic Substrate  

 

Three  Separate  Open-Emitter  Pins  from  Low-Side 
MOSFETs for Three-Leg Current Sensing 

 

Single-Grounded Power Supply for Built-in HVIC 

 

Isolation Rating: 800 V

RMS

 / min 

 

Figure 1. 

Package Outline of Motion SPM 45 LV 

Series 

 

Figure 2.  Internal Equivalent Circuit, Input / Output Pins 

 

 

Содержание FSB43004A

Страница 1: ...by ON Semiconductor Typical parameters which may be provided in ON Semiconductor data sheets and or specifications can and do vary in different applications and actual performance may vary over time All operating parameters including Typicals must be validated for each customer application by customer s technical experts ON Semiconductor does not convey any license under its patent rights nor the ...

Страница 2: ... Outline 7 3 4 Marking Specification 8 4 Product Synopsis 9 4 2 Electrical Characteristic TJ 25 o C unless otherwise specified 10 4 3 Recommended Operating Conditions 12 4 4 Mechanical Characteristics 12 5 Operation Sequence for Protections 13 5 1 Under Voltage Lockout Protection 13 6 Key Parameter Design Guidance 14 6 1 Selection of Shunt resistor 14 6 2 Fault Output Circuit 15 6 3 Circuit of Inp...

Страница 3: ...T based power module has much better ruggedness and a larger Safe Operation Area SOA than MOSFET based module or Silicon On Insulator modules The FRFET based power module has a big advantage in light load efficiency because the voltage drop across the transistor decreases linearly as current decrease Some applications require continuous operation at light load except short transients and improving...

Страница 4: ...Line up Table 1 shows the basic line up Online loss temperature simulation tool Motion Control Design Tool Motion Control Design Tool is recommended to find out the right SPM product for the desired application Table 1 Product Line up Target Application Fairchild Device MOSFET Rating Motor Rating Error Reference source not found Isolation Voltage Small Power Inverter Power Tool FSB44104A 40 A 40 V...

Страница 5: ... the accomplishment of optimization package size while maintaining outstanding heat dissipation characteristics without compromising the isolation rating In the SPM package technology was developed in which bare ceramic with good heat dissipation characteristics is attached directly to the lead frame This technology already applied in SPM but was improved through new adhesion methods This made it ...

Страница 6: ... NV Negative DC Link Input 7 NU Negative DC Link Input 8 VFO Fault Output 9 IN UL PWM Input for Low Side U Phase MOSFET Drive 10 IN VL PWM Input for Low Side V Phase MOSFET Drive 11 IN WL PWM Input for Low Side W Phase MOSFET Drive 12 COM Common Supply Ground 13 VCC Common Supply Voltage for IC and Low side MOSFET Drive 14 IN UH PWM Input for High Side U Phase MOSFET Drive 15 IN VH PWM Input for H...

Страница 7: ... built in MOSFETs They are activated by voltage input signals The terminals are internally connected to a Schmitt trigger circuit composed of 5 V class CMOS The signal logic of these pins is active HIGH The MOSFETs associated with each of these pins are turn on when a sufficient logic voltage is applied to these pins The wiring of each input should be as short as possible to protect the Motion SPM...

Страница 8: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 7 3 3 Package Outline ...

Страница 9: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 8 3 4 Marking Specification ...

Страница 10: ... calculation value or design factor Table 4 Control Part Symbol Parameter Conditions Rating Unit VCC Control Supply Voltage Applied between VCC COM 20 V VBS High Side Control Bias Voltage Applied between VB U VS U VB V VS V VB W VS W 20 V VIN Input Signal Voltage Applied between IN UH IN VH IN WH IN UL IN VL IN WL COM 0 3 VCC 0 3 V VFO Fault Output Supply Voltage Applied between VFO COM 0 3 VCC 0 ...

Страница 11: ...BS 15 V VIN 5 V ID 40 A 3 0 4 1 mΩ VSD Source Drain Diode Forward Voltage VCC VBS 15 V VIN 0 V ISD 40 A 0 8 1 1 V HS tON Switching Times VPN 20 V VCC VBS 15 V ID 40 A VIN 0 V 5 V Inductive Load See Figure 7 1200 µs tC ON 1140 tOFF 1700 tC OFF 500 trr 70 Irr 5 LS tON 1370 tC ON 1000 tOFF 1850 tC OFF 600 trr 75 Irr 4 IDSS Drain Source Leakage Current VDS VDSS 250 µA Note 4 BVDSS is the absolute maxi...

Страница 12: ... Control Part Symbol Parameter Conditions Min Typ Max Unit IQCC Quiescent VCC Supply Current VCC H 15 V IN UH VH WH 0 V VCC H COM 2 75 mA IQBS Quiescent VBS Supply Current VBS 15 V IN UH VH WH 0 V VB U VS U VB V VS V VB W VS W 0 3 mA VFOH Fault Output Voltage VCC 15 V VSC 0 V VFO Circuit 4 7 kΩ to 5 V Pull up 4 5 V VFOL VCC 15 V VSC 1 V VFO Circuit 4 7 kΩ to 5 V Pull up 0 5 UVCCD Supply Circuit Un...

Страница 13: ... WH COM VCC L COM 13 5 15 0 16 5 VBS High Side Bias Voltage Applied between VB U VS U VB V VS V VB W VS W 13 0 15 0 18 5 V dVCC dt dVBS dt Control Supply Variation 1 1 V µs VSEN Voltage for Current Sensing Applied between NU NV NW COM Including Surge Voltage 4 4 V 4 4 Mechanical Characteristics Figure 9 Flatness Measurement Position Parameter Conditions Value Unit Min Typ Max Device Flatness See F...

Страница 14: ...N and carrying current The HVIC has an under voltage lockout function to protect the high side MOSFET from insufficient gate driving voltage A timing chart for this protection is shown in Figure 11 A fault out FO alarm is not given for low HVIC bias conditions Input Signal Output Current Fault Output Signal Control Supply Voltage RESET UVBSR Protection Circuit State SET RESET UVBSD Filtering Resta...

Страница 15: ...0 03 V max 0 033 V Tolerance 10 depends on system Shunt resistance ISC max VSC max RSHUNT min RSHUNT min VSC max ISC max If the deviation of the shunt resistor is limited below 1 RSHUNT typ RSHUNT min 0 99 RSHUNT max RSHUNT typ 1 01 Actual SC trip current level becomes ISC typ VSC typ RSHUNT min ISC min VSC min RSHUNT max Inverter output power POUT where VO LL Inverter output line to line voltage ...

Страница 16: ...SC max 60 A and VREF level is 2 5 V To prevent malfunction it is recommended that an RC filter be inserted at the CSC pin To shut down MOSFETs within 3 µs when over current situation occurs a time constant of 1 5 2 µs is recommended 6 2 Fault Output Circuit VFO terminal is an open drain type it should be pulled up via a pull up resistor The resistor must satisfy the above specifications 0 0 0 2 0 ...

Страница 17: ...the HVIC does not drive the high side MOSFET if the VBS voltage drops below a specified voltage refer to the datasheet This function prevents the MOSFET from operating in a high dissipation mode There are a number of ways in which the VBS floating supply can be generated One of them is the bootstrap method described here refer to Figure 18 This method has the advantage of being simples and inexpen...

Страница 18: ...21 and Figure 22 shows waveform initial bootstrap capacitor charging voltage and current Figure 21 Each Part Initial Operating Waveform of Bootstrap Circuit Conditions VDC 20 V VCC 15 V CBS 22 μF LS MOSFET Turn on Duty 200 μsec Figure 22 Each Part Operating Waveform of Bootstrap Circuit Conditions VDC 20 V VCC 15 V CBS 22 μF LS MOSFET Full Turn on 6 4 3 Selection of Bootstrap Capacitor Considering...

Страница 19: ...otstrap capacitor If the minimum ON pulse width of low side MOSFET or the minimum OFF pulse width of high side MOSFET is tO the bootstrap capacitor must be charged to increase the voltage by ΔV during this period Therefore the value of bootstrap resistance can be calculated by BS ΔV BS o BS CC BS C t V V R where VCC Supply voltage VBS Minimum bootstrap voltage tO Minimum ON pulse width CBS Bootstr...

Страница 20: ...CBS CSP15 5V RPF Motor VDC CDCS Gating UH Gating VH Gating WL Gating VL Gating UL CPF M C U RSH Current Sensing RS RS RS RS RS RS RBS DBS RBS DBS LVIC VFO VCC IN UL IN VL IN WL COM OUT UL OUT VL OUT WL NW 5 U 4 V 3 W 2 P 1 21 VS W 22 VB W 19 VS V 20 VB V 8 VFO 11 IN WL 10 IN VL 9 IN UL 12 COM HVIC VB W COM VS W 16 IN WH 15 IN VH 17 VS U 18 VB U 14 IN UH OUT WH NV 6 NU 7 VB V VS V VB U VS U VCC IN ...

Страница 21: ...ND and Power GND as short as possible Place sunbber capacitor between P and N and closely to terminals Isolation distance between high voltage block and low voltage block should be kept The V IN RC filter should be placed to SPM as close as possible Capacitor should be locate closely to terminals of SPM Wiring between N U N V N W and shunt resistor should be as short as possible C SC wiring should...

Страница 22: ...AN 9111 APPLICATION NOTE 2015 Fairchild Semiconductor Corporation www fairchildsemi com Rev 1 1 6 26 15 21 Packing Information Figure 26 Packing Information ...

Страница 23: ...OLICY FAIR HI D PRODU T ARE NOT AUTHORIZED FOR U E A RITI A OMPONENT IN IFE UPPORT DEVI E OR Y TEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in...

Страница 24: ... the rights of others ON Semiconductor products are not designed intended or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body Should Buyer purchase or use ON Semiconductor products for any such unintended ...

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