©2006 Fairchild Semiconductor Corporation
6
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FSAM50SM60A Rev. C4
FSAM50SM60A Moti
on
SPM®
2 Series
Electrical Characteristics
Inverter Part
(T
J
= 25°C, unless otherwise specified.)
2nd Notes:
4. t
ON
and t
OFF
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Item
Symbol
Condition Min.
Typ.
Max.
Unit
Collector - emitter
Saturation Voltage
V
CE(SAT)
V
CC
= V
BS
= 15 V
V
IN
= 0 V
I
C
= 50 A, T
J
= 25°C
-
-
2.4
V
FWDi Forward Voltage
V
FM
V
IN
= 5 V
I
C
= 50 A, T
J
= 25°C
-
-
2.1
V
Switching Times
t
ON
V
PN
= 300 V, V
CC
= V
BS
= 15 V
I
C
= 50 A, T
J
= 25°C
V
IN
= 5 V
0 V, Inductive Load
(High- And Low-Side)
(2nd Note 4)
-
0.69
-
s
t
C(ON)
-
0.32
-
s
t
OFF
-
1.32
-
s
t
C(OFF)
-
0.46
-
s
t
rr
-
0.10
-
s
Collector-Emitter
Leakage Current
I
CES
V
CE
= V
CES
, T
J
= 25°C
-
-
250
A
t
rr
I
C
V
CE
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
90% I
C
10% V
CE
100% I
C
(a) Turn-on
t
rr
I
C
V
CE
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
90% I
C
10% V
CE
100% I
C
(a) Turn-on
(b) Turn-off
I
C
V
CE
V
IN
t
OFF
t
C(OFF)
10% V
CE
10% I
C
V
IN(OFF)
(b) Turn-off
I
C
V
CE
V
IN
t
OFF
t
C(OFF)
10% V
CE
10% I
C
V
IN(OFF)