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©2006 Fairchild Semiconductor Corporation                                                 

6                                                                

www.fairchildsemi.com

FSAM50SM60A Rev. C4

FSAM50SM60A  Moti

on
 SPM®

 2 Series

Electrical Characteristics

Inverter Part

 (T

J

 = 25°C, unless otherwise specified.)

2nd Notes: 

4. t

ON

 and t

OFF

 include the propagation delay time of the internal drive IC. t

C(ON)

 and t

C(OFF)

 are the switching time of IGBT itself under the given gate driving condition

internally. For the detailed information, please see Figure 4.

Figure 4. Switching Time Definition

Item

Symbol

Condition Min.

Typ.

Max.

Unit

Collector - emitter 
Saturation Voltage

V

CE(SAT)

V

CC

 = V

BS

 = 15 V 

V

IN

 = 0 V

I

C

 = 50 A, T

J

 = 25°C

-

-

2.4

V

FWDi Forward Voltage

V

FM

V

IN

 = 5 V

I

C

 = 50 A, T

J

 = 25°C

-

-

2.1

V

Switching Times

t

ON

V

PN

 = 300 V, V

CC

 = V

BS

 = 15 V

I

C

 = 50 A, T

J

 = 25°C

V

IN

 = 5 V 

 0 V, Inductive Load

(High- And Low-Side)

(2nd Note 4) 

-

0.69

-

s

t

C(ON)

-

0.32

-

s

t

OFF

-

1.32

-

s

t

C(OFF)

-

0.46

-

s

t

rr

-

0.10

-

s

Collector-Emitter 
Leakage Current

I

CES

V

CE

 = V

CES

, T

J

 = 25°C

-

-

250

A

t

rr

I

C

V

CE

V

IN

t

ON

t

C(ON)

V

IN(ON)

10% I

C

90% I

C

10% V

CE

100% I

C

(a) Turn-on

t

rr

I

C

V

CE

V

IN

t

ON

t

C(ON)

V

IN(ON)

10% I

C

90% I

C

10% V

CE

100% I

C

(a) Turn-on

(b) Turn-off

I

C

V

CE

V

IN

t

OFF

t

C(OFF)

10% V

CE

10% I

C

V

IN(OFF)

(b) Turn-off

I

C

V

CE

V

IN

t

OFF

t

C(OFF)

10% V

CE

10% I

C

V

IN(OFF)

Содержание FSAM50SM60A

Страница 1: ...ce Industrial Motor Resource AN 9043 Motion SPM 2 Series User s Guide General Description FSAM50SM60A is a Motion SPM 2 module providing a fully featured high performance inverter stage for AC Inducti...

Страница 2: ...oring using built in thermistor Note Available temperature monitoring circuit is given in Figure 14 Fault signaling corresponding to a SC fault low side IGBTs and UV fault low side control supply Inpu...

Страница 3: ...Phase IC 13 VB U High Side Bias Voltage for U Phase IGBT Driving 14 VS U High SideBias Voltage Ground for U Phase IGBT Driving 15 IN VH Signal Input for High Side V Phase 16 COM H High Side Common Su...

Страница 4: ...verter power side is composed of four inverter DC link input pins and three inverter output pins 3 Inverter high side is composed of three normal IGBTs including freewheeling diodes and three drive IC...

Страница 5: ...5 C Item Symbol Condition Rating Unit Control Supply Voltage VCC Applied between VCC UH VCC VH VCC WH COM H VCC L COM L 20 V High Side Control Bias Voltage VBS Applied between VB U VS U VB V VS V VB W...

Страница 6: ...Item Symbol Condition Min Typ Max Unit Collector emitter Saturation Voltage VCE SAT VCC VBS 15 V VIN 0 V IC 50 A TJ 25 C 2 4 V FWDi Forward Voltage VFM VIN 5 V IC 50 A TJ 25 C 2 1 V Switching Times tO...

Страница 7: ...nt IQCCL VCC 15 V IN UL VL WL 5V VCC L COM L 26 mA IQCCH VCC 15 V IN UH VH WH 5V VCC UH VCC VH VCC WH COM H 130 A Quiescent VBS Supply Cur rent IQBS VBS 15 V IN UH VH WH 5V VB U VS U VB V VS V VB W VS...

Страница 8: ...age VCC Applied between VCC UH VCC VH VCC WH COM H VCC L COM L 13 5 15 0 16 5 V High side Bias Voltage VBS Applied between VB U VS U VB V VS V VB W VS W 13 0 15 0 18 5 V Blanking Time for Preventing A...

Страница 9: ...use DBC substrate cracks and bolts and Al heat sink destruction 10 Avoid one side tightening stress Figure 8 shows the recommended torque order for mounting screws Uneven mounting can cause the Motion...

Страница 10: ...Under Voltage Protection Low Side P1 Normal operation IGBT ON and conducting current P2 Under voltage detection P3 IGBT gate interrupt P4 No fault signal P5 Under voltage reset P6 Normal operation IG...

Страница 11: ...ors for the gating input signals IN UL IN VL IN WL IN UH IN VH and IN WH should be placed on the Motion SPM 2 product pins and on the both sides of MCU and Motion SPM 2 Product for the fault output si...

Страница 12: ...5 The bootstrap resistor RBS should be three times greater than RE H The recommended value of RE H is 5 6 but it can be increased up to 20 for a slower dv dt of high side 6 The ceramic capacitor plac...

Страница 13: ...e used across each power supply connection terminals 7 To prevent errors of the protection function the wiring around RSC RF and CSC should be as short as possible 8 In the short circuit protection ci...

Страница 14: ...r without notice Please note the revision and or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision Package specifications do not expa...

Страница 15: ...2006 Fairchild Semiconductor Corporation 15 www fairchildsemi com FSAM50SM60A Rev C4 FSAM50SM60A Motion SPM 2 Series...

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