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FSDH321, FSDL321

9

Functional Description

1. Startup

 : In previous generations of Fairchild Power

Switches (FPS

TM

) the Vstr pin had an external resistor to the

DC input voltage line. In this generation the startup resistor
is replaced by an internal high voltage current source and a
switch that shuts off when 15ms goes by after the supply
voltage, Vcc, gets above 12V. The source turns back on if
Vcc drops below 8V. 

Figure 4. High Voltage Current Source

2. Feedback Control

 : The FSDx321 employs current mode

control, as shown in Figure 5. An opto-coupler (such as the
H11A817A) and shunt regulator (such as the KA431) are
typically used to implement the feedback network. Compar-
ing the feedback voltage with the voltage across the Rsense
resistor plus an offset voltage makes it possible to control the
switching duty cycle. When the KA431 reference pin volt-
age exceeds the internal reference voltage of 2.5V, the opto-
coupler LED current increases, the feedback voltage Vfb is
pulled down and it reduces the duty cycle. This event typi-
cally happens when the input voltage is increased or the out-
put load is decreased.

Figure 5. Pulse Width Modulation (PWM) Circuit

3. Leading Edge Blanking (LEB) 

: At the instant the inter-

nal Sense FET is turned on, the primary side capacitance and
secondary side rectifier diode reverse recovery typically
cause a high current spike through the Sense FET. Excessive
voltage across the Rsense resistor leads to incorrect feedback
operation in the current mode PWM control. To counter this
effect, the FPS employs a leading edge blanking (LEB) cir-
cuit. This circuit inhibits the PWM comparator for a short
time (t

LEB

) after the Sense FET is turned on.

4. Protection Circuits 

: The FPS has several protective

functions such as over load protection (OLP), over voltage
protection (OVP), abnormal over current protection
(AOCP), under voltage lock out (UVLO) and thermal shut-
down (TSD). Because these protection circuits are fully inte-
grated inside the IC without external components, the
reliability is improved without increasing cost. Once a fault
condition occurs, switching is terminated and the Sense FET
remains off. This causes Vcc to fall. When Vcc reaches the
UVLO stop voltage V

STOP

 (8V), the protection is reset and

the internal high voltage current source charges the Vcc
capacitor via the Vstr pin. When Vcc reaches the UVLO
start voltage V

START

 (12V), the FPS resumes its normal

operation. In this manner, the auto-restart can alternately
enable and disable the switching of the power Sense FET
until the fault condition is eliminated.

4.1 Over Load Protection (OLP) 

:

 

Overload is defined as

the load current exceeding a pre-set level due to an unex-
pected event. In this situation, the protection circuit should
be activated in order to protect the SMPS. However, even
when the SMPS is operating normally, the over load protec-
tion (OLP) circuit can be activated during the load transition.
In order to avoid this undesired operation, the OLP circuit is
designed to be activated after a specified time to determine
whether it is a transient situation or an overload situation. In
conjunction with the Ipk current limit pin (if used) the cur-
rent mode feedback path would limit the current in the Sense
FET when the maximum PWM duty cycle is attained. If the
output consumes more than this maximum power, the output
voltage (Vo) decreases below its rating voltage. This reduces
the current through the opto-coupler LED, which also
reduces the opto-coupler transistor current, thus increasing
the feedback voltage (V

FB

). If V

FB

 exceeds 3V, the feed-

back input diode is blocked and the 5uA current source (I

DE-

LAY

) starts to charge Cfb slowly up to Vcc. In this condition,

V

FB

 increases until it reaches 6V, when the switching opera-

tion is terminated as shown in Figure 6. The shutdown delay
time is the time required to charge Cfb from 3V to 6V with
5uA current source.

Vin,dc

Vstr

Vcc

15ms after

Vcc

12V

UVLO off

Vcc<8V

UVLO on

I

STR

J-FET

I

CH

3

OSC

Vcc

Vcc

5uA

0.9mA

V

SD

R

2.5R

Gate

driver

OLP

D1

D2

V

FB

Vfb

431

C

FB

Vo

+

-

V

FB,in

Содержание FPS FSDH0265RN

Страница 1: ...e Lock Out UVLO protection Leading Edge Blanking LEB an optimized gate turn on turn off driver Thermal Shut Down TSD protection Abnormal Over Cur rent Protection AOCP and temperature compensated preci sion current sources for loop compensation and fault protection circuitry When compared to a discrete MOSFET and controller or RCC switching converter solution the FSDx321 devices reduce total compon...

Страница 2: ...agram of FSDx321 8V 12V 2 6 7 8 1 3 Vref Internal Bias S Q Q R OSC Vcc Vcc IDELAY IFB VSD TSD Vovp Vcc Vocp S Q Q R R 2 5R Vcc good Vcc Drain Vfb GND AOCP Gate driver 5 Vstr ICH Vcc good VBURL VBURH LEB PWM 4 Ipk Freq Modulation VBURH Vcc IBUR pk Burst Normal Soft Start ...

Страница 3: ...using an internal 5uA current source This time delay prevents false triggering under transient conditions but still allows the protection mechanism to operate under true overload conditions 4 Ipk This pin adjusts the peak current limit of the Sense FET The feedback 0 9mA current source is diverted to the parallel combination of an internal 2 8kΩ resistor and any external resistor to GND on this pi...

Страница 4: ... and 51 10 DIP Characteristic Symbol Value Unit Drain Pin Voltage VDRAIN 650 V Vstr Pin Voltage VSTR 650 V Drain Gate Voltage VDG 650 V Gate Source Voltage VGS 20 V Drain Current Pulsed 1 IDM 1 5 A Continuous Drain Current Tc 25 ID 0 7 A Continuous Drain Current Tc 100 ID 0 32 A Single Pulsed Avalanche Energy 2 EAS 10 mJ Supply Voltage VCC 20 V Feedback Voltage Range VFB 0 3 to VCC V Total Power D...

Страница 5: ...quency fOSC FSDH321 90 100 110 KHz Switching Frequency Modulation fMOD 2 5 3 0 3 5 KHz Switching Frequency fOSC FSDL321 45 50 55 KHz Switching Frequency Modulation fMOD 1 0 1 5 2 0 KHz Switching Frequency Variation 2 fOSC 25 C Ta 85 C 5 10 Maximum Duty Cycle DMAX FSDH321 62 67 72 FSDL321 71 77 83 UVLO Threshold Voltage VSTART VFB GND 11 12 13 V VSTOP VFB GND 7 8 9 V Feedback Source Current IFB VFB...

Страница 6: ...icable Programmable of default current limit Smaller transformer Allows power limiting constant over load power Allows use of larger device for lower losses and higher efficiency Frequency Modulation not applicable 3 0KHz 100KHz 1 5KHz 50KHz Reduces conducted EMI Burst Mode Operation Built into controller Built into controller same for both devices Improves light load efficiency Reduces power cons...

Страница 7: ...0 100 150 Temp Normalized Frequency Modulation FMOD vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Maximum Duty Cycle DMAX vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Operating Supply Current IOP vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Start Threshold Voltage VSTART vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0...

Страница 8: ...60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Peak Current Limit ILIM vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Start Up Charging Current ICH vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Burst Peak Current IBUR pk vs Ta 0 00 0 20 0 40 0 60 0 80 1 00 1 20 50 0 50 100 150 Temp Normalized Over Voltage Protection VOVP vs Ta ...

Страница 9: ...ction circuits are fully inte grated inside the IC without external components the reliability is improved without increasing cost Once a fault condition occurs switching is terminated and the Sense FET remains off This causes Vcc to fall When Vcc reaches the UVLO stop voltage VSTOP 8V the protection is reset and the internal high voltage current source charges the Vcc capacitor via the Vstr pin W...

Страница 10: ...T within 350ns after it is activated Figure 7 Abnormal Over Current Protection AOCP 4 4 Over Voltage Protection OVP In the event of a mal function in the secondary side feedback circuit or an open feedback loop caused by a soldering defect the current through the opto coupler transistor becomes almost zero refer to Figure 5 Then VFB climbs up in a similar manner to the over load situation forcing ...

Страница 11: ...witching continues until the feedback voltage drops below VBURL 350mV At this point switching stops and the output voltages start to drop at a rate dependent on the standby current load This causes the feedback voltage to rise Once it passes VBURH 500mV switching resumes The feedback voltage then falls and the process repeats Burst mode operation alternately enables and disables switching of the p...

Страница 12: ... pin forms a parallel resistance with the 2 8kΩ when the internal diodes are biased by the main current source of 900uA Figure 13 Peak Current Limit Adjustment For example FSDx321 has a typical Sense FET peak current limit ILIM of 0 7A ILIM can be adjusted to 0 5A by insert ing Rx between the Ipk pin and the ground The value of the Rx can be estimated by the following equations 0 7A 0 5A 2 8kΩ XkΩ...

Страница 13: ...efficiency as well as lower audible noise Adjusting Sound Frequency Moving the fundamental frequency of noise out of 2 4 kHz range is the third method Generally humans are more sensi tive to noise in the range of 2 4 kHz When the fundamental frequency of noise is located in this range one perceives the noise as louder although the noise intensity level is identical Refer to Figure 14 Equal Loudnes...

Страница 14: ...he pule by pulse peak current limit level ILIM is set to default value 0 7A by floating the Ipk pin 4 R102 and C101 clamp the DRAIN voltage of MOSFET below 650V under all conditions 1 Schematic Application Output power Input voltage Output voltage Max current PC Auxiliary Power Supply 10W DC 140 375V 5 0V 2 0A 10W PC Auxiliary Power Circuit T1 EE1625 7 10 D201 SB360 C201 1000uF 16V C203 470uF 16V ...

Страница 15: ...ation Polyester Tape t 0 050m m 3Layers N 5V 10 7 0 55φ 1 12 Solenoid w inding Insulation Polyester Tape t 0 050m m 3Layers N M V cc 4 6 0 20φ 1 40 Solenoid w inding Insulation Polyester Tape t 0 050m m 3Layers N P 2 2 1 0 15φ 1 80 Solenoid w inding Insulation Polyester Tape t 0 050m m 3Layers N a 5 6 0 20φ 1 34 Solenoid w inding O uter Insulation P olyester Tape t 0 050m m 3Layers P in S p e c R ...

Страница 16: ...1 4W D103 1N4937 PN Ultra Fast R203 2K 1 4W D201 SB360 Schottky R204 2K 1 4W ZD1 1N4746A 18V Zener ZD2 1N4746A 18V Zener Capacitor C101 10nF 630V Film IC C102 47uF 50V Electrolytic IC101 FSDH321 FPS C103 10uF 50V Electrolytic IC201 KA431 TL431 Voltage reference C104 22nF 50V Film IC301 H11A817A Opto Coupler C201 1000uF 16V Electrolytic C202 100nF 50V Ceramic C203 1uF 100V Electrolytic C204 470uF 1...

Страница 17: ...FSDH321 FSDL321 17 Package Dimensions 8DIP ...

Страница 18: ...FSDH321 FSDL321 18 Package Dimensions Continued 8LSOP ...

Страница 19: ...9 Ordering Information Product Number Package Marking Code BVDSS fOSC RDS ON FSDH321 8DIP DH321 650V 100KHz 14Ω FSDL321 8DIP DL321 650V 50KHz 14Ω FSDH321L 8LSOP DH321 650V 100KHz 14Ω FSDL321L 8LSOP DL321 650V 50KHz 14Ω ...

Страница 20: ...ructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user 2 A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness www fairchildsemi com DISCLAIMER FAIRCHILD SEMICONDUCTOR RE...

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