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Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof 
and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond the set out in its standard conditions of sale in 
respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein. 

 

e2v technologies limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU United Kingdom   Telephone: +44 (0)1245 493493   Facsimile: +44 (0)1245 492492  

 
e-mail: 

[email protected]

   Internet: 

www.e2v.com

   Holding Company: e2v technologies plc  

 
e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA   Telephone: (914) 592-6050   Facsimile: (914) 592-5148   e-mail: [email protected] 
 

© e2v technologies (uk) limited 2014 

 

A1A-100026, Version 9, December 2014 

 

 

118717

 

 

 

INTRODUCTION 

The  CCD42-90 is a  large area full-frame (FF) imaging 
device. Back illumination technology, in combination with an 
extremely low noise amplifier, makes the devices well suited 
to the most demanding astronomical and scientific imaging 
applications. 
 

DESCRIPTION 

The device has an image area with 2048 x 4612 pixels each 
13.5 µm square. There is a single read-out register with low-
noise amplifiers at both ends. Additional JFET buffers are 
included in the package to provide an increased capability to 
drive high-capacitance loads. A  gate-controlled dump-drain 
is provided to allow fast dumping of unwanted data. The 
register is designed to accommodate four  image pixels of 
charge and a summing well is provided capable of holding 
that from  six  image pixels. The output amplifier has a 
feature to enable the responsivity to be reduced, allowing 
the reading of such large charge packets. 

The device is supplied in a package designed to facilitate 
the construction of large close-butted mosaics used  at 
cryogenic  temperatures. The design of the package will 
ensure that the device flatness is maintained at the working 
temperature.  

The sensor is shipped in a protective container, but no 
permanent window is fitted. 
 

VARIANTS 

Standard silicon and deep depletion silicon device types can 
be supplied with a range of AR coatings. Graded coatings 
are available as custom variants. 

Mating ZIF sockets are available to order. 

 

PART REFERENCES 

CCD42-90-g-xxx 

g = cosmetic grade 
xxx = device-specific part number  
 
Details are given on the last page. 
 
Devices with other formats (e.g. 2048 x 2048, 4096 x 4096 
pixels) are also available in the same family. 

Consult e2v technologies for further information on any of 
the above options. 

 

 

 

SUMMARY PERFORMANCE 

(Typical values) 

Number of pixels 

2048(H) x 4612(V) 

Pixel size 

13.5 µm square 

Image area 

27.6 mm x 62.2 mm 

Outputs 

Package size 

28.2mm x 67.3 mm 

Package format 

Invar metal package with 
PGA connector 

Focal plane height, above base 

14.00 mm 

Connectors 

PGA; 40 pins 

Flatness 

15 µm p-v maximum 

Amplifier responsivity 

4.5 µV/e

 

Readout noise (rms) 

3 e

 at 20 kHz 

Maximum data rate 

3 MHz 

Image pixel charge storage 

150,000 e

 

Dark signal at 173K 

3 e

/pixel/hour 

 
Quoted performance parameters given here are “typical” 
values. Specification limits are shown later in this data 
sheet. 

 

CCD42-90 Scientific CCD Sensor

 

Back-illuminated, 2048 x 4612 Pixels, 

Non Inverted Mode Operation

 

Содержание CCD42-90

Страница 1: ...egister is designed to accommodate four image pixels of charge and a summing well is provided capable of holding that from six image pixels The output amplifier has a feature to enable the responsivit...

Страница 2: ...grade b Maximum register capacity c Output node capacity under different modes 3 For highest responsivity and lowest nose mode 1 the voltage on OG2 should be 1V higher than that on OG1 For increased c...

Страница 3: ...neration rate is 5 e pixel s at 173 K which is also equivalent to 100 e hour at 153 K The temperature dependence is the same as for the mean dark signal see note 6 above Black spots A black spot defec...

Страница 4: ...band Deep depletion silicon Astro Midband Deep depletion silicon Astro ER1 response Deep depletion silicon Astro Multi 2 Maximum Pixel Response Non Uniformity PRNU 1 Wavelength nm Minimum QE Minimum Q...

Страница 5: ...es of charges as they are transferred from the image section At either end of the register are an additional 50 elements leading to the charge detection amplifiers The last clocked electrodes are sepa...

Страница 6: ...st applications the output at OS will be used with external load 1 that can be either a 3 5 mA current source or a 5 10 k resistor RL JD and OP and external load 2 are left unconnected In this mode th...

Страница 7: ...1 3 4 20 B2 DD L Dump drain 22 24 26 0 3 to 30 B7 DD R Dump drain 22 24 26 0 3 to 30 D2 OG2 L Output gate 2L See Note 11 20 D7 OG2 R Output gate 2R See Note 11 20 B1 OD L Output drain L 27 29 32 0 3...

Страница 8: ...wn For charge dumping DG should be pulsed to within 12 2 V 11 OG1 is typically set to 3 V Then for operation in the high responsivity low noise mode 1 OG2 should be set 1 V higher at typically 4 V For...

Страница 9: ...te voltage starts to increase from zero It is also important to ensure that excess currents see Note 12 do not flow in the OS pins Such currents could arise from rapid charging of a signal coupling ca...

Страница 10: ...Document subject to disclaimer on page 1 A1A 100026 Version 9 page 10 FRAME READOUT TIMING DIAGRAM DETAIL OF LINE TRANSFER I 1 I 2 I 3 R 1 R 2 R R 3 toi toi toi toi toi tdtr tdrt I 1 I 2 I 3 R 1 R 2 R...

Страница 11: ...DETAIL OF OUTPUT CLOCKING tWX tdX Reset feed through Signal output Reset sampling window Signal sampling window Trr R 1 R 2 R R 3 Output tWX tdX Reset feed through Signal output Reset sampling window...

Страница 12: ...read out R 1 tdrs tdg2 tdg3 tdg4 tdg1 tdsr Line transfer into register Dump charge into drain Next line read out Line transfer into register DETAIL OF VERTICAL LINE TRANSFER MULTIPLE LINE DUMP 1 2 R...

Страница 13: ...clock cycle period 300 see Note 16 see Note 15 ns trr Register pulse rise time 10 to 90 50 0 1Tr 0 3Tr ns tfr Register pulse fall time 10 to 90 trr 0 1Tr 0 3Tr ns tor Register clock pulse overlap 50 0...

Страница 14: ...gies uk limited 2014 Document subject to disclaimer on page 1 A1A 100026 Version 9 page 14 PACKAGE DETAIL Package Mass 150 g approx Inactive edge spacing Sides 260 50 m Top 120 50 m Bottom bond connec...

Страница 15: ...GY RADIATION Performance parameters will begin to change if the device is subject to ionising radiation Characterisation data is held at e2v technologies with whom it is recommended that contact be ma...

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