AP63300/1-EVM
3.8V TO 32V INPUT, 3A LOW IQ SYNCHRONOUS BUCK WITH
ENCHANCED EMI REDUCTION
AP63300/AP63301
Document number: DS42002 Rev. 3 - 2
6 of 11
September 2019
© Diodes Incorporated
EXTERNAL COMPONENT SELECTION:
1) Input & output Capacitors (Cin, Cout)
(1) For lower output ripple, low ESR is required.
(2) Low leakage current needed, X5R/X7R ceramic recommend, multiple capacitor parallel
connection.
(3) The Cin and Cout capacitances are greater than 22uF and 44uF respective.
2) Bootstrap Voltage Regulator
(1) An external 0.1uF ceramic capacitor is required as bootstrap capacitor between BST and SW
pin to work as high side power MOSFET gate driver.
3) Inductor (L)
(1) Low DCR for good efficiency
(2) Inductance saturate current must higher than the output current
(3) The recommended inductance is shown in the table 2 below.
EVALUATION BOARD SCHEMATIC
VIN
BS
LX
FB
6.8
m
H
C
IN
V
IN
= 12 V
GND
C
OUT
22
m
F*2
V
OUT
= 5.0 V
A
P
6
3
3
0
0
0.1uF
10
m
F
EN
157K
1
m
F
OFF
Floating
100pF
30K
Figure 3. Typical Application Circuit
