Cypress Traveo S6J32E Series, Руководство пользователя

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Document Number: 002-10689 Rev *H Page 153 of 166
S6J32E, S6J32F, S6J32G Series
8.7 Flash Memory
8.7.1 Electrical Characteristics
Parameter
Value
Unit Remarks
Min Typ Max
Sector erase time
- 300 1100 ms
8 KB sector
*1
Internal preprogramming time included
- 800 3700 ms
64 KB sector
*1
Internal preprogramming time included
8bit write time
- 15 288 µs
System-level overhead time excluded
*1
16bit write time
- 19 384 µs
System-level overhead time excluded
*1
32bit write time
- 27 567 µs
System-level overhead time excluded
*1
64bit write time
- 45 945 µs
System-level overhead time excluded
*1
16bit (with ECC) write
time
- 23 483 µs
System-level overhead time excluded
*1
32bit (with ECC) write
time
- 31 651 µs
System-level overhead time excluded
*1
64bit (with ECC) write
time
- 49 1029 µs
System-level overhead time excluded
*1
Erase count
*2
/
Data retention time
1,000/20 years
10,000/10 years
100,000/5 years - - -
Temperature at write/erase time
Average temperature T
A
= +85 °C
Notes:
−
*1: Guaranteed value for up to 100,000 erases
−
*2: Number of erases for each sector
8.7.2 Notes
While the Flash memory is written or erased, shutdown of the external power (VCC5 or VCC12) is prohibited.
In the application system, where VCC5 or VCC12 might be shut down while writing or erasing, be sure to turn the power off by
using an external voltage detection function or external reset (RSTX).
For external power supply voltage stability conditions, see chapter 8.4.5.2 and 8.4.11.4.