CY8CKIT-040 PSoC
®
4000 Pioneer Kit Guide, Doc. # 001-91316 Rev. *F
113
Advanced Topics
6.2
Using FM24W256 F-RAM
The PSoC 4000 Pioneer Kit has an onboard Ferroelectric RAM chip that can hold up to 32 KB of
data. Cypress F-RAM products combine the nonvolatile data storage capability of ROM with the
benefits of RAM, which include a high number of read and write cycles, high-speed read and write
cycles, and low power consumption. F-RAM core memory and integrated products are ideal for
applications that require high data integrity and ultra-low power consumption. These products target
markets in automotive, industrial, enabling technologies, and networking. F-RAM inherently features
high endurance, fast single-cycle, and symmetrical read/write speeds, along with low energy con-
sumption, gamma radiation tolerance, and immunity to electromagnetic noise.
The F-RAM chip provides an I
2
C communication interface for data access. It is hardwired to the
PSoC 4000 I
2
C lines (P1_2 and P1_3); the same lines are routed to the PSoC 5LP I
2
C lines as well.
Because the F-RAM device is an I
2
C slave, it can be accessed or shared among various I
2
C masters
on the same line. For more details on the F-RAM device, refer to the
This section describes a simple example on how to set the address of the F-RAM device, use it with
an I
2
C master (PSoC 4000) device, and share the same RAM with the BCP through the PSoC 5LP
USB-I
2
C bridge.
6.2.1
Address Selection
The slave address of the F-RAM device consists of two parts, as shown in
: slave ID and
device select. Slave ID is an F-RAM family-specific ID located in the particular F-RAM device data-
sheet. For the device used in CY8CKIT-040 (FM24W256-G), the slave ID is 1010b. The device
select bits are set using the three physical pins A2-A0 in the device. The setting of these three pins
in CY8CKIT-040 is controlled by resistors R19/R18 (A0), R17/R16 (A1), and R15/R14 (A2). See
Cypress Ferroelectric RAM (F-RAM) on page 46
for details.
Figure 6-13. F-RAM I
2
C Address Byte Structure
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