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Document Number: 002-00856 Rev. *E 

Page 30 of 59

S29JL064J

Figure 10.2  

Erase Operation

Notes:
1. See 

Table  on page 31

 for erase command sequence.

2. See the section on DQ3 for information on the sector erase timer.

10.8

Erase Suspend/Erase Resume Commands

The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program 
data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only 
during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase 
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must 
contain one of the sectors currently selected for erase.

When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 µs to 
suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device 
immediately terminates the time-out period and suspends the erase operation. 

After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or 
program data to any sector not selected for erasure. (The device 

erase suspends

 all sectors selected for erasure.) It is not 

recommended to program the Secured Silicon Region after an erase suspend, as proper device functionality cannot be guaranteed. 
Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or 
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to 

Write Operation Status

 

on page 32

 for information on these status bits.

After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can 
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. 
Refer to 

Write Operation Status

 on page 32

 for more information.

In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading 
autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device 
exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to 

Autoselect Mode

 on page 16

 and 

Autoselect Command Sequence

 on page 27

 for details. 

To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-
suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase 
Suspend command can be written after the chip has resumed erasing. 

START

Write Erase 

Command Sequence

(Notes 1, 2)

Data Poll to Erasing 

Bank from System

Data = FFh?

No

Yes

Erasure Completed

Embedded 
Erase
algorithm
in progress

Содержание S29JL064J

Страница 1: ...cycles per sector typical Data retention 20 years typical Software Features Supports Common Flash Memory Interface CFI Erase suspend erase resume Suspends erase operations to read data from or program...

Страница 2: ...2 Reset Command 26 10 3 Autoselect Command Sequence 27 10 4 Enter Secured Silicon Region Exit Secured Silicon Region Command Sequence 27 10 5 Byte Word Program Command Sequence 27 10 6 Chip Erase Com...

Страница 3: ...with the JEDEC 42 4 single power supply Flash command set standard Commands are written to the command register using standard microprocessor write timings Reading data out of the device is similar t...

Страница 4: ...C 55 60 70 CE Access ns tCE 55 60 70 OE Access ns tOE 25 25 30 VCC VSS Bank 1 Address Bank 2 Address A21 A0 RESET WE CE BYTE DQ0 DQ15 WP ACC STATE CONTROL COMMAND REGISTER RY BY Bank 1 X Decoder OE BY...

Страница 5: ...1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 A15 A18 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE RESET A21 WP ACC RY...

Страница 6: ...nnected to the package connector The connection may be used by Spansion for test or other purposes and is not intended for connection to any host system signal Any DNU signal related function will be...

Страница 7: ...Document Number 002 00856 Rev E Page 7 of 59 S29JL064J 6 Logic Symbol 22 16 or 8 DQ15 DQ0 A 1 A21 A0 CE OE WE RESET BYTE RY BY WP ACC...

Страница 8: ...rial 40 C to 85 C Package Material Set F Pb free H Low halogen Pb free Package Type B Fine pitch Ball Grid Array FBGA Package T Thin Small Outline Package TSOP Standard Pinout Speed Option 55 55 ns 60...

Страница 9: ...VIL sectors 0 1 140 and 141 remain protected If WP ACC VIH protection on sectors 0 1 140 and 141 depends on whether they were last protected or unprotected using the method described in Boot Sector S...

Страница 10: ...r or the entire chip or suspending resuming the erase operation The device address space is divided into four banks A bank address is the address bits required to uniquely select a bank ICC2 in the DC...

Страница 11: ...ic sleep mode current specification 8 7 RESET Hardware Reset Pin The RESET pin provides a hardware method of resetting the device to reading array data When the RESET pin is driven low for at least a...

Страница 12: ...00C000h 00DFFFh 06000h 06FFFh SA7 0000000111 8 4 00E000h 00FFFFh 07000h 07FFFh SA8 0000001xxx 64 32 010000h 01FFFFh 08000h 0FFFFh SA9 0000010xxx 64 32 020000h 02FFFFh 10000h 17FFFh SA10 0000011xxx 64...

Страница 13: ...0110xxx 64 32 260000h 26FFFFh 130000h 137FFFh SA46 0100111xxx 64 32 270000h 27FFFFh 138000h 13FFFFh SA47 0101000xxx 64 32 280000h 28FFFFh 140000h 147FFFh SA48 0101001xxx 64 32 290000h 29FFFFh 148000h...

Страница 14: ...SA93 1010110xxx 64 32 560000h 56FFFFh 2B0000h 2B7FFFh SA94 1010111xxx 64 32 570000h 57FFFFh 2B8000h 2BFFFFh SA95 1011000xxx 64 32 580000h 58FFFFh 2C0000h 2C7FFFh SA96 1011001xxx 64 32 590000h 59FFFFh...

Страница 15: ...64 32 7B0000h 7BFFFFh 3D8000h 3DFFFFh SA131 1111100xxx 64 32 7C0000h 7CFFFFh 3E0000h 3E7FFFh SA132 1111101xxx 64 32 7D0000h 7DFFFFh 3E8000h 3EFFFFh SA133 1111110xxx 64 32 7E0000h 7EFFFFh 3F0000h 3F7F...

Страница 16: ...ut access to high voltage on the A9 pin The command sequence is illustrated in Table on page 31 Note that if a Bank Address BA on address bits A21 A20 and A19 is asserted during the third write cycle...

Страница 17: ...0000001XXX 0000010XXX 0000011XXX 192 3x64 kbytes SA11 SA14 00001XXXXX 256 4x64 kbytes SA15 SA18 00010XXXXX 256 4x64 kbytes SA19 SA22 00011XXXXX 256 4x64 kbytes SA23 SA26 00100XXXXX 256 4x64 kbytes SA2...

Страница 18: ...disables program and erase functions in sectors 0 1 140 and 141 independently of whether those sectors were protected or unprotected using the method described in Boot Sector Sector Block Protection a...

Страница 19: ...rotected sectors can be programmed or erased by selecting the sector addresses Once VID is removed from the RESET pin all the previously protected sectors are protected again Figure 8 1 shows the algo...

Страница 20: ...sector address with A6 1 A1 1 A0 0 Set up first sector address Wait 15 ms Verify Sector Unprotect Write 40h to sector address with A6 1 A1 1 A0 0 Read from sector address with A6 1 A1 1 A0 0 START PLS...

Страница 21: ...addresses 000000h 000007h in word mode or 000000h 00000Fh in byte mode The secure ESN is programmed in the next 8 words at addresses 000008h 00000Fh or 000010h 00001Fh in byte mode The device is avail...

Страница 22: ...VCC is greater than VLKO The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO 8 14 2 Write Pulse Glitch Protection Noise pulses...

Страница 23: ...st write the reset command to return to reading array data For further information please refer to the CFI Specification and CFI Publication 100 Contact your local sales office for copies of these doc...

Страница 24: ...Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information refer to the CFI specification or CFI publication 100 31h 32h 33h 34h 62h 64h 66h 68h 007...

Страница 25: ...tor Protect Unprotect scheme 01 29F040 mode 02 29F016 mode 03 29F400 04 29LV800 mode 4Ah 94h 0077h Simultaneous Operation 00 Not Supported X Number of Sectors excluding Bank 1 4Bh 96h 0000h Burst Mode...

Страница 26: ...26 for more information See Requirements for Reading Array Data on page 10 for more information Read Only Operations on page 42 provides the read parameters and Figure 17 1 on page 42 shows the timin...

Страница 27: ...page 31 shows the address and data requirements for both command sequences See also Secured Silicon Region on page 21 for further information Note that the ACC function and unlock bypass modes are no...

Страница 28: ...am and Unlock Bypass Reset commands are valid To exit the unlock bypass mode the system must issue the two cycle unlock bypass reset command sequence See Table on page 31 The device offers accelerated...

Страница 29: ...trical erase The system is not required to provide any controls or timings during these operations After the command sequence is written a sector erase time out of 50 s occurs During the time out peri...

Страница 30: ...red Silicon Region after an erase suspend as proper device functionality cannot be guaranteed Reading at any address within erase suspended sectors produces status information on DQ7 DQ0 The system ca...

Страница 31: ...r to the erase suspend read mode if previously in Erase Suspend when a bank is in the autoselect mode or if DQ5 goes high while the bank is providing status information S29JL064J Command Definitions C...

Страница 32: ...se algorithm is in progress or completed or whether a bank is in Erase Suspend Data Polling is valid after the rising edge of the final WE pulse in the command sequence During the Embedded Program alg...

Страница 33: ...edded Algorithm is in progress or complete The RY BY status is valid after the rising edge of the final WE pulse in the command sequence Since RY BY is an open drain output several RY BY pins can be t...

Страница 34: ...DQ6 toggles for approximately 3 ms then returns to reading array data If not all selected sectors are protected the Embedded Erase algorithm erases the unprotected sectors and ignores the selected se...

Страница 35: ...cycles But DQ2 cannot distinguish whether the sector is actively erasing or is erase suspended DQ6 by comparison indicates whether the device is actively erasing or is in Erase Suspend but cannot dist...

Страница 36: ...icates whether the program or erase time has exceeded a specified internal pulse count limit Under these conditions DQ5 produces a 1 indicating that the program or erase cycle was not successfully com...

Страница 37: ...nput voltage on WP ACC is 9 5V which may overshoot to 12 0V for periods up to 20 ns 3 No more than one output may be shorted to ground at a time Duration of the short circuit should not be greater tha...

Страница 38: ...VCC max RESET 12 5V 35 A ICC1 VCC Active Read Current Notes 1 2 CE VIL OE VIH Byte Mode 5 MHz 10 16 mA 1 MHz 2 4 CE VIL OE VIH Word Mode 5 MHz 10 16 1 MHz 2 4 ICC2 VCC Active Write Current Notes 2 3...

Страница 39: ...Not 100 tested 14 2 Zero Power Flash Figure 14 1 ICC1 Current vs Time Showing Active and Automatic Sleep Currents Note Addresses are switching at 1 MHz VID Voltage for Autoselect and Temporary Sector...

Страница 40: ...Specifications Test Condition 55 60 70 Unit Output Load Capacitance CL 30 100 pF Input Rise and Fall Times Note 1 5 ns Input Pulse Levels 0 0 or VCC V Input timing measurement reference levels 0 5 VC...

Страница 41: ...Switching Waveforms Figure 16 1 Input Waveforms and Measurement Levels Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don t Care Any Change Permitted Changing State Unknown...

Страница 42: ...td 55 60 70 Unit tAVAV tRC Read Cycle Time Note 1 Min 55 60 70 ns tAVQV tACC Address to Output Delay CE OE VIL Max 55 60 70 ns tELQV tCE Chip Enable to Output Delay OE VIL Max 55 60 70 ns tGLQV tOE Ou...

Страница 43: ...ms to Read Mode See Note Max 35 s tReady RESET Pin Low NOT During Embedded Algorithms to Read Mode See Note Max 500 ns tRP RESET Pulse Width Min 500 ns tRH Reset High Time Before Read See Note Min 50...

Страница 44: ...d 55 60 70 tELFL tELFH CE to BYTE Switching Low or High Max 5 ns tFLQZ BYTE Switching Low to Output High Z Max 16 ns tFHQV BYTE Switching High to Output Active Min 55 60 70 ns DQ15 Output Data Output...

Страница 45: ...35 40 ns tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write OE High to WE Low Min 0 ns tELWL tCS CE Setup Time M...

Страница 46: ...ta at the program address 2 Illustration shows device in word mode Figure 17 6 Accelerated Program Timing Diagram OE WE CE VCC Data Addresses tDS tAH tDH tWP PD tWHWH1 tWC tAS tWPH tVCS 555h PA PA Rea...

Страница 47: ...te Cycle Timings OE CE Addresses VCC WE Data 2AAh SA tAH tWP tWC tAS tWPH 555h for chip erase 10 for Chip Erase 30h tDS tVCS tCS tDH 55h tCH In Progress Complete tWHWH2 VA VA Erase Command Sequence la...

Страница 48: ...ote VA Valid address not required for DQ6 Illustration shows first two status cycle after command sequence last status read cycle and array data read cycle WE CE OE High Z tOE High Z DQ7 DQ0 DQ6 RY BY...

Страница 49: ...d Options JEDEC Std Unit tVIDR VID Rise and Fall Time See Note Min 500 ns tVHH VHH Rise and Fall Time See Note Min 250 ns tRSP RESET Setup Time for Temporary Sector Unprotect Min 4 s tRRB RESET Hold T...

Страница 50: ...H Address Hold Time Min 30 35 40 ns tDVEH tDS Data Setup Time Min 30 35 40 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write OE High to WE Low Min 0 ns tWLEL tWS WE Setu...

Страница 51: ...ress PD program data 3 DQ7 is the complement of the data written to the device DOUT is the data written to the device 4 Waveforms are for the word mode tGHEL tWS OE CE WE RESET tDS Data tAH Addresses...

Страница 52: ...mation on command definitions 5 The device has a minimum program and erase cycle endurance of 100 000 cycles per sector 19 Pin Capacitance Notes 1 Sampled not 100 tested 2 Test conditions TA 25 C f 1...

Страница 53: ...IE DOWN INK OR LASER MARK 4 TO BE DETERMINED AT THE SEATING PLANE C THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZO...

Страница 54: ...ON OF THE CENTER SOLDER BALL IN THE OUTER ROW WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION RESPECTIVELY SD OR SE 0 000 WHEN THERE IS AN EVEN NUMBER OF...

Страница 55: ...tion that It is not recommended to program the Secured Silicon Region after an erase suspend as proper device functionality cannot be guaranteed In Table 10 1 corrected the Secured Silicon Region Fact...

Страница 56: ...dware Reset RESET Removed note to the Reset Timings figure clarifying that CE should only go low after RESET has gone high Erase and Programming Performance Updated Byte Program Time and Word Program...

Страница 57: ...must write the reset command to return to reading array data Enter Secured Silicon Region Exit Secured Silicon Region Command Sequence Removed the incorrect generalizing statement that the Secured Sil...

Страница 58: ...fying that CE should only go low after RESET has gone high C RYSU 08 24 2011 RESET Hardware Reset Pin Removed warning that keeping CE at VIL from power up through the first reset could cause erroneuou...

Страница 59: ...pport of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement Any reproduction modification translation compilation or representat...

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