Cypress Semiconductor CY8C24123, Техническое описание

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CY8C24123
CY8C24223, CY8C24423
Document Number: 38-12011 Rev. *G Page 17 of 43
DC Electrical Characteristics
DC Chip-Level Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
° C
≤
T
A
≤
85 ° C, or 3.0V to 3.6V and -40 ° C
≤
T
A
≤
85 ° C, respectively. Typical parameters apply to 5V and 3.3V at 25 ° C and
are for design guidance only or unless otherwise specified.
Table 13. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
Vdd Supply Voltage 3.00 – 5.25 V
I
DD
Supply Current – 5 8 mA Conditions are Vdd = 5.0V, 25
o
C,
CPU = 3 MHz, 48 MHz disabled. VC1
= 1.5 MHz, VC2 = 93.75 kHz,
VC3 = 93.75 kHz.
I
DD3
Supply Current – 3.3 6.0 mA Conditions are Vdd = 3.3V, T
A
= 25
o
C, CPU = 3 MHz, 48 MHz =
Disabled, VC1 = 1.5 MHz,
VC2 = 93.75 kHz, VC3 = 93.75 kHz.
I
SB
Sleep (Mode) Current with POR, LVD,
Sleep Timer, and WDT.
a
a. Standby current includes all functions (POR, LVD, WDT, Sleep Time) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
– 3 6.5
μ
A Conditions are with internal slow
speed oscillator, Vdd = 3.3V, -40
o
C
<= T
A
<= 55
o
C.
I
SBH
Sleep (Mode) Current with POR, LVD,
Sleep Timer, and WDT at high temper-
ature.
a
– 4 25
μ
A Conditions are with internal slow
speed oscillator, Vdd = 3.3V,
55
o
C < T
A
<= 85
o
C.
I
SBXTL
Sleep (Mode) Current with POR, LVD,
Sleep Timer, WDT, and external crystal.
a
– 4 7.5
μ
A Conditions are with properly loaded,
1
μ
W max, 32.768 kHz crystal. Vdd
= 3.3V, -40
o
C <= T
A
<= 55
o
C.
I
SBXTLH
Sleep (Mode) Current with POR, LVD,
Sleep Timer, WDT, and external crystal at
high temperature.
a
– 5 26
μ
A Conditions are with properly loaded,
1
μ
W max, 32.768 kHz crystal.
Vdd = 3.3 V, 55
o
C < T
A
<= 85
o
C.
V
REF
Reference Voltage (Bandgap) 1.275 1.3 1.325 V Trimmed for appropriate Vdd.
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