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CY7C1339G

Document #: 38-05520 Rev. *F

Page 4 of 18

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t

CO

) is 2.6 ns

(250-MHz device). 

The CY7C1339G supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486

processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.

Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW

[A:D]

) inputs. A Global Write

Enable (GW) overrides all Byte Write inputs and writes data to

all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.

Three synchronous Chip Selects (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE

1

is HIGH.

Single Read Accesses

This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE

1

, CE

2

, CE

3

 are all asserted active, and (3) the Write

signals (GW, BWE) are all deserted HIGH. ADSP is ignored if
CE

1

 is HIGH. The address presented to the address inputs (A)

is stored into the address advancement logic and the Address
Register while being presented to the memory array. The
corresponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within 2.6 ns (250-MHz device) if OE is active
LOW. The only exception occurs when the SRAM is emerging
from a deselected state to a selected state, its outputs are
always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE

ADV

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK, active LOW

. When asserted, it 

automatically increments the address in a burst cycle.

ADSP

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers. A1, A0 
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is 
recognized. ASDP is ignored when CE

1

 is deasserted HIGH.

ADSC

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers. A1, A0 
are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is 
recognized.

ZZ

Input-

Asynchronous

ZZ “sleep” Input, active HIGH

. When asserted HIGH places the device in a non-time-critical 

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or 
left floating. ZZ pin has an internal pull-down.

DQs

I/O-

Synchronous

Bidirectional Data I/O lines

. As inputs, they feed into an on-chip data register that is triggered 

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location 
specified by the addresses presented during the previous clock rise of the read cycle. The direction 
of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When 
HIGH, DQs are placed in a tri-state condition.

V

DD

Power Supply

Power supply inputs to the core of the device

V

SS

Ground

Ground for the core of the device

V

DDQ

I/O Power 

Supply

Power supply for the I/O circuitry

V

SSQ

I/O Ground

Ground for the I/O circuitry

MODE

Input-

Static

Selects Burst Order

. When tied to GND selects linear burst sequence. When tied to V

DD

 or left 

floating selects interleaved burst sequence. This is a strap pin and should remain static during 
device operation. Mode Pin has an internal pull-up.

NC,NC/9M,
NC/18M.
NC/72M, 
NC/144M, 
NC/288M,
NC/576M,
NC/1G

No Connects

. Not internally connected to the die. NC/9M, NC/18M, NC/72M, NC/144M, 

NC/288M, NC/576M and NC/1G are address expansion pins are not internally connected to the 
die.

Pin Definitions

 (continued)

Name

I/O

Description

[+] Feedback 

Содержание CY7C1339G

Страница 1: ...Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe...

Страница 2: ...A DQA DQA DQA VSSQ VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V...

Страница 3: ...sampled only when a new external address is loaded CE2 Input Synchronous Chip Enable 2 Input active HIGH Sampled on the rising edge of CLK Used in conjunction with CE1 and CE3 to select deselect the d...

Страница 4: ...tate to a selected state its outputs are always tri stated during the first cycle of the access After the first cycle of the access the outputs are controlled by the OE ADV Input Synchronous Advance I...

Страница 5: ...s conducted the data presented to the DQs is written into the corresponding address location in the memory core If a Byte Write is conducted only the selected bytes are written Bytes not selected duri...

Страница 6: ...X X X L H H H H L L H Q READ Cycle Suspend Burst Current X X X L H H H H H L H Tri State READ Cycle Suspend Burst Current H X X L X H H H L L H Q READ Cycle Suspend Burst Current H X X L X H H H H L H...

Страница 7: ...rite Bytes C B H L H L L H Write Bytes C B A H L H L L L Write Byte D DQD H L L H H H Write Bytes D A H L L H H L Write Bytes D B H L L H L H Write Bytes D B A H L L H L L Write Bytes D C H L L L H H...

Страница 8: ...V for 2 5V I O IOL 1 0 mA 0 4 V VIH Input HIGH Voltage 9 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 9 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage...

Страница 9: ...Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 34 1 C W JC Thermal Resistance Junction to Case 6 85 14 0 C W AC T...

Страница 10: ...1 5 1 5 ns Hold Times tAH Address Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 3 0 5 0 5 0 5 ns tWEH GW BWE BWX Hold Af...

Страница 11: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Страница 12: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Страница 13: ...ed by ADSP or ADSC 21 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5...

Страница 14: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 23 DQs are in high Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Страница 15: ...39G 166BGXC 119 ball Ball Grid Array 14 x 22 x 2 4 mm Lead Free CY7C1339G 166AXI 51 85050 100 pin Thin Quad Flat Pack 14 x 20 x 1 4 mm Lead Free Industrial CY7C1339G 166BGI 51 85115 119 ball Ball Grid...

Страница 16: ...IONS IN MILLIMETERS BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 0 30 0 08 0 65 20 00 0 10 22 00 0 20 1 40 0 05 12 1 1 60 MAX 0 05 MIN 0 60 0 15 0 MIN 0 25 0 7 8X STAND OFF...

Страница 17: ...al components in life support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems ap...

Страница 18: ...ormation by shading and unshading MPNs as per availability C 351194 See ECN PCI Updated Ordering Information Table D 366728 See ECN PCI Added VDD VDDQ test conditions in DC Table Modified test conditi...

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