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PRELIMINARY

CY7C1336H

Document #: 001-00210 Rev. *A

Page 3 of 15

Pin Definitions

Name

I/O

Description

A0, A1, 
A

Input-

Synchronous

Address Inputs used to select one of the 64K address locations

. Sampled at the rising edge of the 

CLK if ADSP or ADSC is active LOW, and CE

1

,

 

CE

2

, and

 

CE

are sampled active. A

[1:0]

 feed the 2-bit 

counter.

BW

A

,

 

BW

BW

C

BW

D

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to conduct Byte Writes to the SRAM. 

Sampled on the rising edge of CLK.

GW

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on the rising edge of CLK, a global 

Write is conducted (ALL bytes are written, regardless of the values on BW

[A:D]

 and BWE).

BWE

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge of CLK. This signal must be 

asserted LOW to conduct a Byte Write.

CLK

Input-Clock

Clock Input

. Used to capture all synchronous inputs to the device. Also used to increment the burst 

counter when ADV is asserted LOW, during a burst operation.

CE

1

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with CE

2

 

and CE

3

 to select/deselect the device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled only when a 

new external address is loaded.

CE

2

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of CLK. Used in conjunction with CE

1

 

and CE

3

 to select/deselect the device. CE

is sampled only when a new external address is loaded.

CE

3

Input-

Synchronous

Chip Enable 3 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with CE

and

 

CE

2

 to select/deselect the device. CE

3

 is sampled only when a new external address is loaded. 

OE

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the direction of the I/O pins. When LOW, 

the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data 
pins. OE is masked during the first clock of a Read cycle when emerging from a deselected state. 

ADV

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK

. When asserted, it automatically incre-

ments the address in a burst cycle.

ADSP

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW

. When asserted 

LOW, addresses presented to the device are captured in the address registers. A

[1:0]

 are also loaded 

into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is 
ignored when CE

1

 is deasserted HIGH

ADSC

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW

. When asserted 

LOW, addresses presented to the device are captured in the address registers. A

[1:0]

 are also loaded 

into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.

ZZ

Input-

Asynchronous

ZZ “sleep” Input, active HIGH

. When asserted HIGH places the device in a non-time-critical “sleep” 

condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. 
ZZ pin has an internal pull-down.

DQs

I/O-

Synchronous

Bidirectional Data I/O lines

. As inputs, they feed into an on-chip data register that is triggered by the 

rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the 
addresses presented during the previous clock rise of the Read cycle. The direction of the pins is 
controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs are placed 
in a tri-state condition.

V

DD

Power 

Supply

Power supply inputs to the core of the device

.

V

SS

Ground

Ground for the core of the device

V

DDQ

I/O Power 

Supply

Power supply for the I/O circuitry

V

SSQ

I/O Ground

Ground for the I/O circuitry

MODE

Input-

Static

Selects Burst Order

. When tied to GND selects linear burst sequence. When tied to V

DD

 or left floating 

selects interleaved burst sequence. This is a strap pin and should remain static during device operation. 
Mode Pin has an internal pull-up.

NC

No Connects

. Not Internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and 1G are 

address expansion pins and are not internally connected to the die.

[+] Feedback 

Содержание CY7C1336H

Страница 1: ...ADSP and ADV Write Enables BW A D and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1336H allows either interleaved or linear burst sequences selecte...

Страница 2: ...DQA VSSQ VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CL...

Страница 3: ...merging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK When asserted it automatically incre ments the address in a burst cycle ADSP Input Synchron...

Страница 4: ...ing Byte Writes BWA controls DQA and BWB controls DQB BWC controls DQC and BWD controls DQD All I Os are tri stated during a Byte Write Since this is a common I O device the asynchronous OE input sign...

Страница 5: ...ontinue Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X...

Страница 6: ...L H L H H Write Bytes C A DQPC DQPA H L H L H L Write Bytes C B DQPC DQPB H L H L L H Write Bytes C B A DQPC DQPB DQPA H L H L L L Write Byte D DQPD H L L H H H Write Bytes D A DQPD DQPA H L L H H L W...

Страница 7: ...0 3 0 8 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Current of MODE Input VSS 30 A Input VDD 5 A Input Current of ZZ Input VSS 5 A Input VDD 30 A IOZ Output Leakage Current G...

Страница 8: ...ns 100 TQFP Package Unit JA Thermal Resistance Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resis...

Страница 9: ...after CLK Rise 0 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0...

Страница 10: ...IGH or CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its i...

Страница 11: ...S ADDRESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADV...

Страница 12: ...ADV cycle is performed 19 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q...

Страница 13: ...ed when entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 21 DQs are in High Z when exiting ZZ sleep mode Timing Diagrams continued t ZZ I SUPPLY...

Страница 14: ...any names mentioned in this document may be the trademarks of their respective holders Ordering Information Speed MHz Ordering Code Package Diagram Package Type Operating Range 133 CY7C1336H 133AXC 51...

Страница 15: ...t A 428408 See ECN NXR Changed address of Cypress Semiconductor Corporation on Page 1 from 3901 North First Street to 198 Champion Court Changed Three State to Tri State Modified Input Load to Input L...

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