background image

PRELIMINARY

CY7C1330AV25
CY7C1332AV25

Document No: 001-07844 Rev. *A

Page 13 of 19

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)

Storage Temperature  ................................. –65°C to +150°C

Ambient Temperature with
Power Applied........................................... –55°C to +125

°

°C

Supply Voltage on V

DD

 Relative to GND........ –0.5V to +2.9V

Supply Voltage on V

DDQ

 Relative to GND ...... –0.5V to +V

DD

DC Voltage Applied to Outputs
in High-Z State

[7]

................................. –0.5V to V

DDQ

 + 0.5V

DC Input Voltage

[7]

................................ –0.5V to V

DD

 + 0.5V

Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage........................................... > 1500V
(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... > 200 mA

Operating Range 

Range

Ambient

Temperature

V

DD

V

DDQ

Com’l

0°C to +70°C 

2.37V to 2.63V

1.4V to 1.9V

Electrical Characteristics

 Over the Operating Range

DC Electrical Characteristics 

Over the Operating Range

Parameter

Description

Test Conditions

Min.

Max.

Unit

V

DD

Power Supply Voltage

2.37

2.63

V

V

DDQ

I/O Supply Voltage

1.4

1.9

V

V

OH1

Output HIGH Voltage

[12]

Programmable Impedance Mode

[14]

V

DDQ

/2 V

DD

V

V

OL1

Output LOW Voltage

[13]

Programmable Impedance Mode

[14]

V

SS

V

DDQ

/2 V

V

OH2

Output HIGH Voltage

I

OH

 = –0.1 mA, Minimum Impedance Mode

[15]

V

DDQ 

– 0.2

V

DDQ

V

V

OL2

Output LOW Voltage

I

OL

 = 0.1 mA, Minimum Impedance Mode

[15]

V

SS

0.2

V

V

OH3

Output HIGH Voltage

I

OH

 = –6.0 mA, Minimum Impedance Mode

[15]

V

DDQ

 – 0.4

V

DDQ

V

V

OL3

Output LOW Voltage

I

OL

 = 6.0 mA, Minimum Impedance Mode

[15]

V

SS

0.4

V

V

IH

Input HIGH Voltage

V

REF 

+ 0.1

V

DDQ 

+ 0.3

V

V

IL

Input LOW Voltage

[7]

–0.3

V

REF 

– 0.1

V

I

X

Input Leakage Current 

GND 

 V

I

 

 V

DDQ

–1

1

mA

I

OZ

Output Leakage Current

GND 

 V

I

 

 V

DDQ, 

Output Disabled

–1

1

mA

V

REF

Input Reference Voltage

Typical value = 0.75V

0.68

0.95

V

V

IN

–CLK

Clock Input Reference 
Voltage

–0.3

V

DDQ 

+ 0.3

V

V

DIF

–CLK

Clock Input Differential 
Voltage

0.1

V

DDQ 

+ 0.3

V

V

CM

–CLK

Clock Common Mode 
Voltage

Typical Value =0.75V

0.55

0.95

V

I

DD

V

DD

 Operating Supply 

V

DD 

= Max., I

OUT 

= 0 mA,

f = f

MAX

 = 1/t

CYC

250 MHz

600

mA

200 MHz

550

mA

I

SB1

Automatic CE 
Power-Down 
Current—TTL Inputs

Max. V

DD

, Device Deselected, 

V

IN

 > V

IH

 or V

IN

 < V

IL

f = f

MAX

 = 1/t

CYC

250 MHz

280

mA

200 MHz

260

mA

AC Electrical Characteristics

 

Over the Operating Range

Parameter

Description

Test Conditions

Min.

Max.

Unit

V

IH

Input HIGH Voltage

V

REF

 + 0.2

V

V

IL 

Input LOW Voltage

V

REF

 – 0.2

V

Notes: 

12. I

OH

 = (V

DDQ

/2)/(RQ/5)+15% for 175

 < RQ < 350

.

13. I

OL

 = (V

DDQ

/2)/(RQ/5)+15% for 175

 < RQ < 350

.

14. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to V

SS

 through RQ.

15. Minimum Impedance Output Buffer Mode: The ZQ pin is connected directly to V

SS

 or V

DD

.

16. T

Power-up

: Assumes a linear ramp from 0V to V

DD

 

(min.) within 200 ms. During this time V

IH

 

< V

DD

 

and V

DDQ 

< V

DD

.

[+] Feedback 

Содержание CY7C1330AV25

Страница 1: ...d with late write operation These SRAMs can achieve speeds up to 250 MHz Each memory cell consists of six transistors Late write feature avoids an idle cycle required during the turnaround of the bus...

Страница 2: ...REF VSS VSS VSS VSS M1 CE VSS OE VSS VDDQ BWSc NC VSS NC VDDQ VDD VREF VDD VSS K K BWSa WE VSS VDDQ VSS ZZ NC NC A A A0 A1 VSS VDD M2 CY7C1330AV25 512K x 36 DQc DQb A DQc DQb DQc DQc DQc DQb DQb DQa D...

Страница 3: ...n HIGH DQa DQd are placed in a tri state condition The outputs are automatically tri stated during the data portion of a write sequence during the first clock when emerging from a deselected state and...

Страница 4: ...ss is initiated when the following conditions are satisfied at clock rise 1 CE is asserted active and 2 the write signal WE is asserted LOW The address presented to Ax is loaded into the Address Regis...

Страница 5: ...V25 WE BWd BWc BWb BWa Read 1 X X X X Write Byte 0 DQa 0 1 1 1 0 Write Byte 1 DQb 0 1 1 0 1 Write Bytes 1 0 0 1 1 0 0 Write Byte 2 DQc 0 1 0 1 1 Write Bytes 2 0 0 1 0 1 0 Write Bytes 2 1 0 1 0 0 1 Wri...

Страница 6: ...CK Data is output on the TDO pin on the falling edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed b...

Страница 7: ...y up to 20 MHz while the SRAM clock operates more than an order of magnitude faster Because there is a large difference in the clock frequencies it is possible that during the Capture DR state an inpu...

Страница 8: ...the value at TMS at the rising edge of TCK TAP Controller State Diagram 6 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTUR...

Страница 9: ...Clock LOW 20 ns Set up Times tTMSS TMS Set up to TCK Clock Rise 5 ns tTDIS TDI Set up to TCK Clock Rise 5 ns tCS Capture Set up to TCK Rise 5 ns Hold Times tTMSH TMS Hold after TCK Clock Rise 5 ns tT...

Страница 10: ...F Z0 50 GND 1 25V 50 2 5V 0V ALL INPUT PULSES 1 25V Test Clock Test Mode Select TCK TMS Test Data In TDI Test Data Out tTCYC tTMSH tTL tTH tTMSS tTDIS tTDIH tTDOV tTDOX TDO Identification Register Def...

Страница 11: ...11 Do Not Use This instruction is reserved for future use SAMPLE PRELOAD 100 Captures the Input Output ring contents Places the boundary scan register between TDI and TDO Does not affect the SRAM oper...

Страница 12: ...T 27 6E 51 3G 4 6R 28 7D 52 4D 5 5T 29 6D 53 4E 6 7T 30 6A 54 4G 7 6P 31 6C 55 4H 8 7P 32 5C 56 4M 9 6N 33 5A 57 3L 10 7N 34 6B 58 1K 11 6M 35 5B 59 2K 12 6L 36 3B 60 1L 13 7L 37 2B 61 2L 14 6K 38 3A...

Страница 13: ...Impedance Mode 15 VSS 0 2 V VOH3 Output HIGH Voltage IOH 6 0 mA Minimum Impedance Mode 15 VDDQ 0 4 VDDQ V VOL3 Output LOW Voltage IOL 6 0 mA Minimum Impedance Mode 15 VSS 0 4 V VIH Input HIGH Voltage...

Страница 14: ...a of AC Test Loads Capacitance 17 Parameter Description Test Conditions Max Unit CIN Input Capacitance TA 25 C f 1 MHz VDD 2 5V VDDQ 1 5V 5 pF CCLK Clock Input Capacitance 6 pF CI O Input Output Capa...

Страница 15: ...et Up Before CLK Rise 0 3 0 3 ns tCES Chip Select Set Up 0 3 0 3 ns Hold Times tAH Address Hold After CLK Rise 0 6 0 6 ns tDH Data Input Hold After CLK Rise 0 6 0 6 ns tWEH WE BWx Hold After CLK Rise...

Страница 16: ...elect the device Any chip enable can deselect the device 25 RAx stands for Read Address X WAx Write Address X Dx stands for Data in for location X Qx stands for Data out for location X 26 CE held LOW...

Страница 17: ...orms continued CLK CE tCYC tCH tCL tCES tCEH DON T CARE UNDEFINED READ WRITE READ DESELECT WRITE Deselect READ WRITE WRITE DESELECT ADDRESS WE Data In Out RA1 tAH tAS tWEStWEH tCO Q1 Out D2 In WA2 WA5...

Страница 18: ...s in life support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges All product and company names mentioned in this...

Страница 19: ...Document Title CY7C1330AV25 CY7C1332AV25 18 Mbit 512K x 36 1Mbit x 18 Pipelined Register Register Late Write SRAM Document Number 001 07844 REV ECN No Issue Date Orig of Change Description of Change...

Отзывы: