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CY7C1306BV25

CY7C1303BV25

Document #: 38-05627 Rev. *A

Page 8 of 19

IEEE 1149.1 Serial Boundary Scan (JTAG)

These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant
with IEEE Standard #1149.1-1900. The TAP operates using
JEDEC standard 2.5V I/O logic levels.

Disabling the JTAG Feature

It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(V

SS

) to prevent clocking of the device. TDI and TMS are inter-

nally pulled up and may be unconnected. They may alternately
be connected to V

DD

 through a pull-up resistor. TDO should

be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.

Test Access Port—Test Clock

The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.

Test Mode Select

The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.

Test Data-In (TDI)

The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register. 

Test Data-Out (TDO)

The TDO output pin is used to serially clock data-out from the
registers. The output is active depending upon the current
state of the TAP state machine (see Instruction codes). The
output changes on the falling edge of TCK. TDO is connected
to the least significant bit (LSB) of any register.

Performing a TAP Reset

A Reset is performed by forcing TMS HIGH (V

DD

) for five rising

edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.

TAP Registers

Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK. 

Instruction Register

Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the

TDI and TDO pins as shown in TAP Controller Block Diagram.
Upon power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.

When the TAP controller is in the Capture IR state, the two
least significant bits are loaded with a binary “01” pattern to
allow for fault isolation of the board level serial test path.

Bypass Register

To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(V

SS

) when the BYPASS instruction is executed.

Boundary Scan Register

The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices. 

The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instruc-
tions can be used to capture the contents of the Input and
Output ring.

The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.

Identification (ID) Register

The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.

TAP Instruction Set

Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instruc-
tions are described in detail below.

Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.

IDCODE

The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction

[+] Feedback 

Содержание CY7C1303BV25

Страница 1: ...ts to support Read operations and the Write Port has dedicated Data inputs to support Write operations Access to each port is accomplished through a common address bus The Read address is latched on the rising edge of the K clock and the Write address is latched on the rising edge of K clock QDR has separate data inputs and data outputs to completely eliminate the need to turn around the data bus ...

Страница 2: ...18 18 A 18 0 19 18 C C BWS1 Logic Block Diagram CY7C1303BV25 256Kx36 CLK A 17 0 Gen K K Control Logic Address Register D 35 0 Read Add Decode Read Data Reg RPS WPS Q 35 0 Control Logic Address Register Reg Reg Reg 36 18 36 72 Write 36 BWS0 Vref Write Add Decode Data Reg Write Data Reg Memory Array 256Kx36 Memory Array 36 36 A 17 0 18 36 C C BWS1 BWS2 BWS3 Logic Block Diagram CY7C1306BV25 Selection...

Страница 3: ...D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1306BV25 512K x 36 1 2 3 4 5 6 7 8 9 10 11 A NC Gnd 288M NC 72M WPS BWS2 K BWS1 RPS NC 36M Gnd 144M NC B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q...

Страница 4: ...d operations or K and K when in single clock mode When the Read port is deselected Q x 0 are automatically three stated CY7C1303BV25 Q 17 0 CY7C1306BV25 Q 35 0 RPS Input Synchronous Read Port Select active LOW Sampled on the rising edge of positive input clock K When active a Read operation is initiated Deasserting will cause the Read port to be deselected When deselected the pending access is all...

Страница 5: ...e positive output clock C This will allow for a seamless transition between devices without the insertion of wait states in a depth expanded memory Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input clock K On the same K clock rise the data presented to D 17 0 is latched and stored into the lower 18 bit Write Data register provided BWS ...

Страница 6: ...e SRAM and VSS to allow the SRAM to adjust its output driver impedance The value of RQ must be 5X the value of the intended line impedance driven by the SRAM The allowable range of RQ to guarantee impedance matching with a tolerance of 15 is between 175Ω and 350Ω with VDDQ 1 5V The output impedance is adjusted every 1024 cycles to account for drifts in supply voltage and temperature Application Ex...

Страница 7: ...ower byte D 8 0 is written into the device D 35 9 will remain unaltered L H H H L H During the Data portion of a Write sequence only the lower byte D 8 0 is written into the device D 35 9 will remain unaltered H L H H L H During the Data portion of a Write sequence only the byte D 17 9 is written into the device D 8 0 and D 35 18 will remain unaltered H L H H L H During the Data portion of a Write...

Страница 8: ...etween the TDI and TDO pins as shown in TAP Controller Block Diagram Upon power up the instruction register is loaded with the IDCODE instruction It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section When the TAP controller is in the Capture IR state the two least significant bits are loaded with a binary 01 pattern to allow...

Страница 9: ...he TDI and TDO pins PRELOAD allows an initial data pattern to be placed at the latched parallel outputs of the boundary scan register cells prior to the selection of another boundary scan test operation The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required that is while data captured is shifted out the preloaded data can be shifted in BYPASS When the BYPASS in...

Страница 10: ...to each state represents the value at TMS at the rising edge of TCK TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTURE DR SHIFT IR EXIT1 IR PAUSE IR EXIT2 IR UPDATE IR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 Feedback ...

Страница 11: ...Hz tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns Set up Times tTMSS TMS Set up to TCK Clock Rise 10 ns tTDIS TDI Set up to TCK clock Rise 10 ns tCS Capture Set up to TCK Rise 10 ns Hold Times tTMSH TMS Hold after TCK Clock Rise 10 ns tTDIH TDI Hold after Clock Rise 10 ns tCH Capture Hold after Clock Rise 10 ns Notes 10 These characteristic pertain to the TAP inputs TMS TCK TDI and TDO Parallel ...

Страница 12: ...ck Test Mode Select TCK TMS Test Data In TDI Test Data Out TDO tTCYC tTMSH tTL tTH tTMSS tTDIS tTDIH tTDOX tTDOV 50Ω 2 5V 0V ALL INPUT PULSES 1 25V Identification Register Definitions Instruction Field Value Description CY7C1303BV25 CY7C1306BV25 Revision Number 31 29 000 000 Version number Cypress Device ID 28 12 01011010010010101 01011010010100101 Defines the type of SRAM Cypress JEDEC ID 11 1 00...

Страница 13: ...Z 010 Captures the Input Output contents Places the boundary scan register between TDI and TDO Forces all SRAM output drivers to a High Z state RESERVED 011 Do Not Use This instruction is reserved for future use SAMPLE PRELOAD 100 Captures the Input Output ring contents Places the boundary scan register between TDI and TDO Does not affect the SRAM operation RESERVED 101 Do Not Use This instruction...

Страница 14: ... 11E 61 4B 88 1K 8 9R 35 10E 62 3A 89 2L 9 11P 36 10D 63 1H 90 3L 10 10P 37 9E 64 1A 91 1M 11 10N 38 10C 65 2B 92 1L 12 9P 39 11D 66 3B 93 3N 13 10M 40 9C 67 1C 94 3M 14 11N 41 9D 68 1B 95 1N 15 9M 42 11B 69 3D 96 2M 16 9N 43 11C 70 3C 97 3P 17 11L 44 9B 71 1D 98 2N 18 11M 45 10B 72 2C 99 2P 19 9L 46 11A 73 3E 100 1P 20 10L 47 Internal 74 2D 101 3R 21 11K 48 9A 75 2E 102 4R 22 10K 49 8B 76 1E 103 ...

Страница 15: ... 0 75V 0 68 0 75 0 95 V IX Input Leakage Current GND VI VDDQ 5 5 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply VDD Max IOUT 0 mA f fMAX 1 tCYC 500 mA ISB1 Automatic Power Down Current Max VDD Both Ports Deselected VIN VIH or VIN VIL f fMAX 1 tCYC Inputs Static 240 mA AC Input Requirements Over the Operating Range Parameter Description Test Conditions Min...

Страница 16: ...fter Clock K and K Rise 0 7 ns tHC tHC Control Signals Hold after Clock K and K Rise RPS WPS BWS0 BWS1 0 7 ns tHD tHD D x 0 Hold after Clock K and K Rise 0 7 ns Output Times tCO tCHQV C C Clock Rise or K K in single clock mode to Data Valid 2 5 ns tDOH tCHQX Data Output Hold after Output C C Clock Rise Active to Active 1 2 ns tCHZ tCHZ Clock C and C rise to High Z Active to High Z 23 24 2 5 ns tCL...

Страница 17: ...wing A0 i e A0 1 26 Outputs are disabled High Z one clock cycle after a NOP 27 In this example if address A2 A1 then data Q2 0 D10 and Q21 D11 Write data is forwarded immediately as read results This note applies to the whole diagram READ READ WRITE WRITE WRITE NOP READ WRITE NOP K 1 2 3 4 5 8 10 6 7 K RPS WPS A Q D C C A1 A0 D10 tKH tKHKH tKHCH tCO tKL tCYC tHC tSA tHA tHD tKHCH DON T CARE UNDEFI...

Страница 18: ...d MHz Ordering Code Package Diagram Package Type Operating Range 167 CY7C1303BV25 167BZC 51 85180 165 ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Commercial CY7C1306BV25 167BZC CY7C1303BV25 167BZXC 165 ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Lead free CY7C1306BV25 167BZXC CY7C1303BV25 167BZI 165 ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Industrial CY7C1306BV25 167BZI CY7C1303B...

Страница 19: ...scription Table Changed tTCYC from 100 ns to 50 ns changed tTF from 10 MHz to 20 MHz and changed tTH and tTL from 40 ns to 20 ns in TAP AC Switching Characteristics table Modified the ZQ pin definition as follows Alternately this pin can be connected directly to VDDQ which enables the minimum impedance mode Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND Changed the Maximum Rat...

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