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CY7C1241V18, CY7C1256V18
CY7C1243V18, CY7C1245V18

Document Number: 001-06365 Rev. *D

Page 8 of 28

Functional Overview

The CY7C1241V18, CY7C1256V18, CY7C1243V18, and
CY7C1245V18 are synchronous pipelined Burst SRAMs
equipped with a read and a write port. The read port is dedicated
to read operations and the write port is dedicated to write opera-
tions. Data flows into the SRAM through the write port and out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR-II+ completely
eliminates the need to “turn around” the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1241V18, four 9-bit data transfers in the case of
CY7C1256V18, four 18-bit data transfers in the case of
CY7C1243V18, and four 36-bit data transfers in the case of
CY7C1245V18, in two clock cycles. 

Accesses for both ports are initiated on the Positive Input Clock
(K). All synchronous input and output timing refer to the rising
edge of the input clocks (K/K).

All synchronous data inputs (D

[x:0]

) inputs pass through input

registers controlled by the input clocks (K and K). All
synchronous data outputs (Q

[x:0]

) outputs pass through output

registers controlled by the rising edge of the Input clocks (K and
K). 

All synchronous control (RPS, WPS, BWS

[x:0]

) inputs pass

through input registers controlled by the rising edge of the input
clocks (K/K). 

CY7C1243V18 is described in the following sections. The same
basic descriptions apply to CY7C1241V18, CY7C1256V18, and
CY7C1245V18. 

Read Operations

The CY7C1243V18 is organized internally as 4 arrays of 512K x
18. Accesses are completed in a burst of four sequential 18-bit
data words. Read operations are initiated by asserting RPS
active at the rising edge of the Positive Input Clock (K). The
addresses presented to Address inputs are stored in the Read
address register. Following the next two K clock rising edges, the
corresponding lowest order 18-bit word of data is driven onto the
Q

[17:0]

 using K as the output timing reference. On the subse-

quent rising edge of K the next 18-bit data word is driven onto
the Q

[17:0]

. This process continues until all four 18-bit data words

have been driven out onto Q

[17:0]

. The requested data is valid

0.45 ns from the rising edge of the input clock (K or K). To
maintain the internal logic, each read access must be allowed to
complete. Each read access consists of four 18-bit data words
and takes two clock cycles to complete. Therefore, read
accesses to the device cannot be initiated on two consecutive K
clock rises. The internal logic of the device ignores the second
read request. Read accesses can be initiated on every other K
clock rise. Doing so pipelines the data flow such that data is
transferred out of the device on every rising edge of the input
clocks (K and K). 

When the read port is deselected, the CY7C1243V18 first
completes the pending Read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the Positive Input Clock (K). This enables a
seamless transition between devices without the insertion of wait
states in a depth expanded memory. 

Write Operations

Write operations are initiated by asserting WPS active at the
rising edge of the Positive Input Clock (K). On the following K
clock rise, the data presented to D

[17:0]

 is latched and stored into

the lower 18-bit Write Data register, provided BWS

[1:0]

 are both

asserted active. On the subsequent rising edge of the Negative
Input Clock (K), the information presented to D

[17:0]

 is also stored

into the Write Data register, provided BWS

[1:0]

 are both asserted

active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Write accesses can
be initiated on every other rising edge of the Positive Input Clock
(K). Doing so pipelines the data flow such that 18 bits of data can
be transferred into the device on every rising edge of the input
clocks (K and K). 

When deselected, the write port ignores all inputs after the
pending write operations have been completed. 

Byte Write Operations

Byte Write operations are supported by the CY7C1243V18. A
Write operation is initiated as described in the 

Write Operations

section. The bytes that are written are determined by BWS

0

 and

BWS

1

, which are sampled with each set of 18-bit data words.

Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and written
into the device. Deasserting the Byte Write Select input during
the data portion of a write allows the data stored in the device for
that byte to remain unaltered. This feature can be used to
simplify read/modify/write operations to a Byte Write operation.

Concurrent Transactions

The read and write ports on the CY7C1243V18 operate
completely independently of one another. Since each port
latches the address inputs on different clock edges, you can read
or write to any location, regardless of the transaction on the other
port. If the ports access the same location when a read follows a
write in successive clock cycles, the SRAM delivers the most
recent information associated with the specified address
location. This includes forwarding data from a write cycle that
was initiated on the previous K clock rise.

Read accesses and write access must be scheduled such that
one transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports were deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port assumes priority (because read operations
cannot be initiated on consecutive cycles). If a write was initiated
on the previous cycle, the Read port assumes priority (because
write operations cannot be initiated on consecutive cycles).
Therefore, asserting both port selects active from a deselected
state results in alternating read/write operations being initiated,
with the first access being a read.

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Содержание CY7C1241V18

Страница 1: ...e QDR II architecture consists of two separate ports to access the memory array The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to supp...

Страница 2: ...ister Reg Reg Reg 16 20 8 32 8 NWS 1 0 VREF Write Add Decode Write Reg 16 A 19 0 20 1M x 8 Array 1M x 8 Array 1M x 8 Array Write Reg Write Reg Write Reg 8 CQ CQ DOFF QVLD 1M x 9 Array CLK A 19 0 Gen K...

Страница 3: ...Reg 36 19 18 72 18 BWS 1 0 VREF Write Add Decode Write Reg 36 A 18 0 19 512K x 18 Array 512K x 18 Array 512K x 18 Array Write Reg Write Reg Write Reg 18 CQ CQ DOFF QVLD 256K x 36 Array CLK A 17 0 Gen...

Страница 4: ...C VSS NC Q2 NC NC NC VREF NC NC VDDQ NC VDDQ NC NC VDDQ VDDQ VDDQ D1 VDDQ NC Q1 NC VDDQ VDDQ NC VSS NC D0 NC TDI TMS VSS A NC A NC D2 NC ZQ NC Q0 NC NC NC NC A NC 144M CY7C1256V18 4M x 9 2 3 4 5 6 7 1...

Страница 5: ...D5 NC NC VREF NC Q3 VDDQ NC VDDQ NC Q5 VDDQ VDDQ VDDQ D4 VDDQ NC Q4 NC VDDQ VDDQ NC VSS NC D2 NC TDI TMS VSS A NC A D7 D6 NC ZQ D3 Q2 D1 Q1 D0 NC A NC CY7C1245V18 1M x 36 2 3 4 5 6 7 1 A B C D E F G H...

Страница 6: ...ss Inputs Sampled on the rising edge of the K clock during active read and write opera tions These address inputs are multiplexed for both read and write operations Internally the device is organized...

Страница 7: ...is pin to ground turns off the DLL inside the device The timing in the DLL turned off operation is different from that listed in this data sheet For normal operation this pin can be connected to a pul...

Страница 8: ...ing edge of the Positive Input Clock K This enables a seamless transition between devices without the insertion of wait states in a depth expanded memory Write Operations Write operations are initiate...

Страница 9: ...generated by the QDR II CQ is referenced with respect to K and CQ is refer enced with respect to K These are free running clocks and are synchronized to the input clock of the QDR II The timing for t...

Страница 10: ...D A K SRAM 4 RQ 250ohms ZQ CQ CQ Q K RPS WPS BWS D A K SRAM 1 RQ 250ohms ZQ CQ CQ Q K RPS WPS BWS RPS WPS BWS R 50ohms Vt V 2 DDQ R Notes 2 X Don t Care H Logic HIGH L Logic LOW represents rising edg...

Страница 11: ...7C1241V18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltered CY7C1243V18 only the upper byte D 17 9 is written into the device D 8 0 remains unaltered H L L H During the da...

Страница 12: ...y the byte D 17 9 is written into the device D 8 0 and D 35 18 remain unaltered H L H H L H During the data portion of a write sequence only the byte D 17 9 is written into the device D 8 0 and D 35 1...

Страница 13: ...lling edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TA...

Страница 14: ...egister After the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD places an...

Страница 15: ...3V18 and CY7C1245V18 follows 11 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR SELECT IR SCAN CAPTURE IR SHIFT IR EXIT1 IR PAUSE IR EXIT2 IR U...

Страница 16: ...GH Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 108 0 1 2 Instr...

Страница 17: ...MSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invali...

Страница 18: ...struction Codes Instruction Code Description EXTEST 000 Captures the input output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO Thi...

Страница 19: ...35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M...

Страница 20: ...e power and clock K K for 2048 cycles to lock the DLL DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which is specified as tKC Var The DLL functions a...

Страница 21: ...A Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Voltage IOL 0 1 mA Nominal Impedance VSS 0 2 V VIH Input HIGH Voltage VREF 0 1 VDDQ 0 15 V VIL Input LOW Voltage 0 15 VREF 0 1 V IX Input Leakage...

Страница 22: ...Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance per EIA JESD51 16 25 C W JC Thermal Resistance Junction to Case 2 91 C W AC Test Loads and Waveforms...

Страница 23: ...2 0 2 ns tCQDOH tCQHQX Echo Clock High to Data Invalid 0 2 0 2 0 2 ns tCQH tCQHCQL Output Clock CQ CQ HIGH 25 0 88 1 03 1 15 ns tCQHCQH tCQHCQH CQ Clock Rise to CQ Clock Rise 25 rising edge to rising...

Страница 24: ...A WPS RPS K K DON T CARE UNDEFINED CQ CQ tCQOH CCQO t tCQOH CCQO t tQVLD QVLD tQVLD Read Latency 2 0 Cycles CLZ t t CO tDOH tCQDOH CQD t tCHZ Q00 Q01 Q20 Q02 Q21 Q03 Q22 Q23 tCQH tCQHCQH Q Notes 30 Q...

Страница 25: ...all Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1256V18 375BZI CY7C1243V18 375BZI CY7C1245V18 375BZI CY7C1241V18 375BZXI 51 85195 165 ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Pb...

Страница 26: ...0BZXC CY7C1241V18 300BZI 51 85195 165 ball Fine Pitch Ball Grid Array 15 x 17 x 1 4 mm Industrial CY7C1256V18 300BZI CY7C1243V18 300BZI CY7C1245V18 300BZI CY7C1241V18 300BZXI 51 85195 165 ball Fine Pi...

Страница 27: ...Y7C1245V18 Document Number 001 06365 Rev D Page 27 of 28 Package Diagram Figure 5 165 ball FBGA 15 x 17 x 1 40 mm 51 85195 0 2 2 8 8 8 3 4 0 0 2 2 4 0 6 7 44 6 7 0 2 0 2 3 2 0 490 3 2 3 3 4 3 0 7 4 G...

Страница 28: ...LIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE Cypress reserves the right to make changes without further notice to the materials described herein Cypress does not assume any...

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