CY7C1024DV33
Document Number: 001-08353 Rev. *C
Page 3 of 9
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65
°
C to +150
°
C
Ambient Temperature with
Power Applied ............................................ –55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND
[2]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[2]
................................... –0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
............................... –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............. ...............................>2001V
(MIL-STD-883, Method 3015)
Latch Up Current ..................................................... >200 mA
Operating Range
Range
Ambient
Temperature
V
CC
Industrial
–40
°
C to +85
°
C
3.3V
±
0.3V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
[3]
–10
Unit
Min
Max
V
OH
Output HIGH Voltage
V
CC
= Min, I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min, I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
V
V
IL
[2]
Input LOW Voltage
–0.3
0.8
V
I
IX
Input Leakage Current
GND < V
I
< V
CC
–1
+1
μ
A
I
OZ
Output Leakage Current
GND < V
OUT
< V
CC
, output disabled
–1
+1
μ
A
I
CC
V
CC
Operating Supply
Current
V
CC
= Max, f = f
MAX
= 1/t
RC
I
OUT
= 0 mA CMOS levels
175
mA
I
SB1
Automatic CE Power Down
Current —TTL Inputs
Max V
CC
, CE > V
IH
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
30
mA
I
SB2
Automatic CE Power Down
Current — CMOS Inputs
Max V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V, or V
IN
< 0.3V, f = 0
25
mA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
8
pF
C
OUT
I/O Capacitance
10
pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
119-Ball
PBGA
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still air, soldered on a 3 × 4.5 inch,
four layer printed circuit board
20.31
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
8.35
°
C/W
Notes
2. V
IL
(min) = –2.0V and V
IH
(max) = V
CC
+ 2V for pulse durations of less than 20 ns.
3. CE refers to a combination of CE
1
, CE
2
, and CE
3
. CE is LOW when CE
1
, CE
3
are LOW and CE
2
is HIGH. CE is HIGH when CE
1
is HIGH, or CE
2
is LOW, or CE
3
is HIGH.
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